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Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures

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An Erratum to this article was published on 31 March 2017

Abstract.

This paper was devoted to study the effects of some technological parameters (gate, oxide and doping density N a on the electrical properties of MOS structures. The conductance and capacitance were determined from a proposed admittance model. Results showed a frequency dispersion of C-V g and G-V g curves in inversion regime. This modeling takes into account the influence of series and parallel resistances (R s, R p), thickness of oxide layer, the work function of gate electrode and the doping density (N a). The C-V g and G-V g characteristics have been simulated at high frequency (100 kHz-1 MHz).With increasing frequency, the inversion capacitance is decreased whereas the conductance is strongly increased. A degradation of their shapes is shown in the operating accumulation and depletion modes. The accumulation capacitance seems to be strong for titanium oxide (TiO2) and for the oxide thickness is very small. Interestingly, the change of metal gate causes C-V g shifting and variation of the values of the flat band and threshold voltages. In the inversion mode, the C - V g and G-V g decreases with the increase of the doping density (N a). There is a shift of the flat-band and threshold voltage (V fb,V th) when N a increase. Excellent agreement was observed between the calculated and the measured C-V g curves obtained at high frequency.

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Authors and Affiliations

  1. Laboratory of Composite Ceramic and Polymer Materials (LaMaCoP), Sfax Faculty of Science, Soukra Road Km 4, 3038, Sfax, Tunisia

    Omar Rejaiba & Adel Matoussi

  2. Grupo de Electronica y Semiconductores, Departamento de Fısica Aplicada, Universidad Autonoma de Madrid, 28049, Madrid, Spain

    Alejandro F. Braña

Authors
  1. Omar Rejaiba
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  2. Alejandro F. Braña
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  3. Adel Matoussi
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Correspondence to Omar Rejaiba.

Additional information

An erratum to this article is available at http://dx.doi.org/10.1140/epjp/i2017-11433-9.

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Rejaiba, O., Braña, A. & Matoussi, A. Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures. Eur. Phys. J. Plus 131, 281 (2016). https://doi.org/10.1140/epjp/i2016-16281-5

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