Abstract.
Mg-doped InGaAs films were grown at 560 ° C lattice matched to InP semi-insulating substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp2Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD) and spectroscopic ellipsometry (SE) are the tools used in this work. The crystalline quality and the n-p conversion of the InGaAs:Mg films are described and discussed in relation to the Cp2Mg flow. Distinguishing triple emissions peaks in PL spectra are observed and seem to be strongly dependent on the Cp2Mg flow. SE was used to investigate the interband transitions in InGaAs:Mg/InP heterointerfaces and the different critical point energies were identified.
Similar content being viewed by others
References
International Technology Roadmap for Semiconductors, Process Integration, Devices, and Structures (2011)
J.A. Del Alamo, D. Antoniadis, A. Guo, D-H. Kim, T.W. Kim, J. Lin, W. Lu, A. Vardi, in IEEE International Electron Devices Meeting (2013)
N. Waldron, G. Wang, N.D. Nguyen, T. Ozrali, C. Merckling, G. Brammertz, P. Ong, G. Winderichx, G. Hellings, G. Eneman, M. Caymax, M. Meuris, N. Horiguchi, A. Thean, ECS Trans. 45, 115 (2012)
A. Alian, C. Merckling, G. Brammertz, M. Meuris, M. Heyns, K.D. Meyera, ECS J. Solid State Sci. Technol. 1, 310 (2012)
N. Waldon, C. Merkling, L. Teugels, P. ong, S. Ansar, F. Sebaai, A. Pourghaderi, K. Barla, N. Collaert, A. V-Y Thean, IEEE Electron Dev. Lett. 35, 1097 (2014)
N. Waldon, C. Merkling, W. Guo, P. Ong, L. Teugels, S. Ansar, D. Tsvetanova, F. Sebaai, D.H. Van Drop, A. Milenin, D. Lin, L. Nyns, J. Mitrad, A. Pourghaderi, B. Douhard, O. Richard, H. Bender, O. Boccadri, M. Caymax, M. Heyns, W. Vandervorst, K. Barla, N. Collaert, A.V.-Y. Thean, VLSI-Technology: Digest of Technical Papers, Symposium (IEEE, 2014)
C.R. Abernathy, P.W. Wish, S.J. Pearton, F. Ren, Appl. Phys. Lett. 62, 258 (1993)
C. Blaauw, B. Emmerstorfr, A.J. Springthorpe, J. Cryst. Growth 84, 431 (1987)
W.T. Tsang, F.S. Choa, N.T. Ha, J. Electron. Mater. 20, 541 (1991)
J.C. Lin, S.Y. Yu, S.E. Mohney, J. Appl. Phys. 114, 044504 (2013)
Y. Moon, S. Si, E. Yoon, S.J. Kim, J. Appl. Phys. 83, 2261 (1998)
M. Lambert, D. Huet, Rev. Phys. Appl. 18, 757 (1983)
H.S. Lee, J.Y. Lee, T.W. Kim, D.U. Lee, D.C. Choo, M. Jung, M.D. Kim, J. Appl. Phys. 91, 5195 (2002)
A. Sayari, L. El Mir, S. Al-Heniti, E. Shalaan, S.J. Yaghmour, S.A. Al-Thabaiti, A.A. Al-Ghamdi, F. Yakuphanoglu, J. Electroceram. 30, 221 (2013)
A. Sayari, M. Ezzidini, B. Azeza, S. Rekaya, E. Shalaan, S.J. Yaghmour, A.A. Al-Ghamdi, L. Sfaxi, R. M’ghaieth, H. Maaref, Solar Energy Mater. Solar Cells 113, 1 (2013)
S. Adachi, Properties of Group-IV, III-V and II-VI Semiconductors, edited by Peter Capper, Safa Kasap, Arthur Willoughby (John Wiley, 2005)
Y.S. Ihn, T.H. Ghong, Y.D. KIM, J. Korean Phys. Soc. 42, 242 (2003)
T.J. Kim, Y.S. Ihn, Y.D. Kim, J. Kim, D.E. Aspnes, T. Yao, K. Shim, B.H. Koo, Appl. Phys. Lett. 81, 2367 (2002)
D.E. Aspnes, A.A. Studna, Appl. Phys. Lett. 39, 316 (1981)
G.M. Wu, S.H. Chen, J. Korean Phys. Soc. 52, 1570 (2008)
M. Ezzedini, I. Zeydi, S. El Kazzi, S. Jiang, W. Guo, L. Sfaxi, R. M’ghaieth, H. Maaref, C. Merckling, J. Alloys Compd. 651, 344 (2015)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zeydi, I., Ezzedini, M., Sayari, A. et al. Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP. Eur. Phys. J. Plus 131, 189 (2016). https://doi.org/10.1140/epjp/i2016-16189-0
Received:
Accepted:
Published:
DOI: https://doi.org/10.1140/epjp/i2016-16189-0