Abstract.
Dielectric measurements were carried out on moderately doped n-InP at low temperatures down to 10 K and at frequencies in the range of 120-105 Hz. The low-temperature asymptotic value of the relative dielectric constant (\( \varepsilon_{r}\)) was found to be greater than the host crystal value. The excess of \( \varepsilon_{r}\) above the host crystal value is attributed to the contribution of impurities. This contribution is originated from an overlap between adjacent wave functions of the impurities. A comparison was made with the theoretical approach taking into account the effect of such overlap and a good agreement was obtained.
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Abboudy, S., Alfaramawi, K. & Abulnasr, L. Dielectric constant of moderately doped InP at low frequencies and temperatures. Eur. Phys. J. Plus 131, 39 (2016). https://doi.org/10.1140/epjp/i2016-16039-1
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DOI: https://doi.org/10.1140/epjp/i2016-16039-1