Abstract
Thermal behavior of Pt10 and Pt1 bound to a silicon substrate prepared by the impact of size-selected Pt cluster ions at 1 eV per Pt atom was investigated. Their height and diameter were obtained by statistical analysis of their images using scanning-tunneling microscopy. The Pt10 are stably bound to the Si surface as monatomic-layered Pt10Si x disks with insertion of Si atoms into the clusters at the moment of the impact, and they start to be decomposed between 623 and 673 K under vacuum conditions. The thermal stability of the Pt10Si x disks is comparable to that of a Pt thin film prepared on a Si substrate, but inferior to that of Pt30 disks on the Si substrate. Comparing with thermal behavior of Pt atoms and a PtSi thin film on the Si substrate, it has been concluded that more Si atoms start to diffuse into a Pt10Si x disk between 623 and 673 K, while they do not into a Pt30 disk having a close-packed arrangement of the Pt atoms as high as 673 K, owing to a higher barrier for the Si insertion into the close-packed cluster disk than into the Pt10Si x disk having a longer Pt-Pt internuclear distance.
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References
Nanocatalysis, edited by U. Heiz, U. Landman (Springer, Berlin, 2007)
U. Heiz, A. Sanchez, S. Abbet, W.D. Schneider, J. Am. Chem. Soc. 121, 3214 (1999)
B. Yoon, H. Häkkinen, U. Landman, A.S. Wörz, J.M. Antonietti, S. Abbet, K. Judai, U. Heiz, Science 307, 403 (2005)
W.E. Kaden, T. Wu, W.A. Kunkel, S.L. Anderson, Science 326, 826 (2009)
S. Bonanni, K. Aït-Mansour, W. Harbich, H. Brune, J. Am. Chem. Soc. 134, 3445 (2012)
R.E. Winams, S. Vajda, B. Lee, S.J. Riley, S. Seifert, G.Y. Tikhonoy, N.A. Tomczyk, J. Phys. Chem. B 108, 18105 (2004)
Y. Dai, T.J. Gorey, S.L. Anderson, S. Lee, S. Seifert, R.E. Winans, J. Phys. Chem. C 121, 361 (2017)
V.N. Popok, I. Barke, E.E.B. Campbell, K.H. Meiwes-Broer, Surf. Sci. Rep. 66, 347 (2011)
H. Yasumatsu, T. Kondow, Rep. Prog. Phys. 66, 1783 (2003)
W. Yamaguchi, H. Ohashi, J. Murakami, Chem. Phys. Lett. 364, 1 (2002)
H. Yasumatsu, T. Hayakawa, S. Koizumi, T. Kondow, J. Chem. Phys. 123, 124709 (2005)
H. Yasumatsu, T. Hayakawa, T. Kondow, J. Chem. Phys. 124, 014701 (2006)
H. Yasumatsu, T. Hayakawa, T. Kondow, Chem. Phys. Lett. 487, 279 (2010)
H. Yasumatsu, P. Murugan, Y. Kawazoe, Phys. Stat. Sol. B 6, 1193 (2012)
H. Yasumatsu, N. Fukui, J. Phys. Chem. C 119, 11217 (2015)
H. Yasumatsu, N. Fukui, Surf. Interface Anal. 46, 1204 (2014)
H. Yasumatsu, N. Fukui, Phys. Chem. Chem. Phys. 16, 26493 (2014)
H. Yasumatsu, N. Fukui, Can. J. Chem. Eng. 92, 1531 (2014)
H. Yasumatsu, N. Fukui, Catal. Sci. Technol. 6, 6910 (2016)
A. Beniya, H. Hirata, Y. Watanabe, J. Phys. Chem. Lett. 7, 4710 (2016)
N. Fukui, H. Yasumatsu, Eur. Phys. J. D 67, 81 (2013)
C. Ji, R. Ragan, S. Kim, Y.A. Chang, Y. Chen, D.A.A. Ohlberg, R.S. Williams, Appl. Phys. A 80, 1301 (2005)
A. Wawro, S. Suto, A. Kasuya, Phys. Rev. B 72, 205302 (2005)
A. Wawro, S. Suto, A. Kasuya, Jpn J. Appl. Phys. 45, 2166 (2006)
P. Höpfner, M. Wisniewski, F. Sandrock, J. Schäfer, R. Claessen, Phys. Rev. B 82, 075431 (2010)
M. Gao, Y. Pan, W. Xu, L. Huang, Y. Wang, Y. Lin, H.J. Gao, Appl. Surf. Sci. 314, 841 (2014)
J.C. Bondos, N.E. Drummer, A.A. Gewirth R.G. Nuzzo, J. Phys. Chem. B 103, 3099 (1999)
W. Koczorowski, M. Bazarnik, M. Cegiel, A. Petroutchik, A. Wawro, R. Czajka, Appl. Surf. Sci. 256, 4215 (2010)
H. Yasumatsu, M. Fuyuki, T. Hayakawa, T. Kondow, J. Phys. Conf. Ser. 185, 012057 (2009)
G. Larrieu, E. Dubois, X. Wallart, X. Baie, J. Katcki, J. Appl. Phys. 94, 7801 (2003)
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Contribution to the Topical Issue “Dynamics of Systems at the Nanoscale”, edited by Andrey Solov’yov and Andrei Korol.
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Fukui, N., Yasumatsu, H. Size dependence of thermal stability of Pt clusters bound to Si substrate surface prepared by cluster impact deposition. Eur. Phys. J. D 71, 186 (2017). https://doi.org/10.1140/epjd/e2017-80066-1
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DOI: https://doi.org/10.1140/epjd/e2017-80066-1