The European Physical Journal D

, Volume 65, Issue 3, pp 421–428 | Cite as

Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation

  • X. Landreau
  • B. Lanfant
  • T. Merle
  • E. Laborde
  • C. Dublanche-Tixier
  • P. Tristant
Regular Article Clusters and Nanostructures

Abstract

SiOxHyCz nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiOxHyCz nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • X. Landreau
    • 1
  • B. Lanfant
    • 1
  • T. Merle
    • 2
  • E. Laborde
    • 2
  • C. Dublanche-Tixier
    • 1
  • P. Tristant
    • 1
  1. 1.SPCTS, ENSILLimogesFrance
  2. 2.SPCTS, CECLimogesFrance

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