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Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping

  • Regular Article - Mesoscopic and Nanoscale Systems
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Abstract

In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B2C4P2 monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B2C4P2 photodetector. Additionally, the armchair B2C4P2 photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B2C4P2 monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices.

Graphical abstract

Robust photogalvanic effect (PGE) phenomena and very high extinction ratio have been produced in the armchair B2C4P2 photodetector with the vacancies and substitution-doping included.

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Acknowledgements

The authors thank the Hongzhiwei Cloud Platform for providing computer time and technical support. This work was supported by the National Natural Science Foundation of China (Grant Numbers 12264016, 11304128, 11664010), the Hunan Natural Science Foundation of China (Grant Numbers 2023JJ50413, 2020JJ2015, 2021JJ30549), the Scientific Research Foundation of the Education Department of Hunan Province (Grant Number 22A0579), and the Construct Program of Applied Characteristic Discipline in Hunan University of Science and Engineering (Mathematics, Education, Electronic Science and Technology).

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Author notes

  1. Xi Fu and Jian Lin have contributed equally to this work and should be considered co-first authors.

Authors and Affiliations

  1. College of Science, Hunan University of Science and Engineering, Yongzhou, 425199, China

    Xi Fu & Xiaowu Li

  2. Department of Physics, Jishou University, Jishou, 416000, China

    Xi Fu, Jian Lin & Wenhu Liao

  3. School of Science, Jiangsu University of Science and Technology, Zhenjiang, 212003, China

    Jiyuan Guo

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  1. Xi Fu
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Contributions

Xi Fu, Jian Lin, Wenhu Liao, and Jiyuan Guo performed calculations. Xiaowu Li, Jian Lin, and Jiyuan Guo performed data analysis. All authors read and contributed to the manuscript.

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Correspondence to Xi Fu or Xiaowu Li.

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Fu, X., Lin, J., Liao, W. et al. Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping. Eur. Phys. J. B 97, 8 (2024). https://doi.org/10.1140/epjb/s10051-023-00632-w

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