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Electronic properties of slid bilayer graphene: effective models in low energy range

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Abstract

A generic tight-binding model for 2pz electrons in bilayer graphene (BLG) systems is used to derive the expression of effective Hamiltonians for low-energy states around the K-points of hexagonal Brillouin zone. The obtained effective Hamiltonians are validated for two kinds of AA-like and AB-like slid bilayer graphene (SBG). It is shown that, for the former case, the electronic structure is characterized by a gauge vector field which couples to the sliding vector to deform the band structure of the AA-stacked configuration as a perturbation. For the latter case, since the A–B interlayer coupling is the most dominant, it allows separating the energy bands and lowering the 4 × 4 Hamiltonian into a 2 × 2 effective model. A gauge vector field also appears, but different from the AA-like SBGs, it plays the role similar to an in-plane magnetic field.

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Authors and Affiliations

  1. National University of Civil Engineering (NUCE), 55 Giai Phong road, Hanoi, 10000, Vietnam

    Sy-Ta Ho

  2. Phenikaa Institute for Advanced Study (PIAS), Phenikaa University, Yen Nghia ward, Ha Dong district, Hanoi 10000, Vietnam

    Hoang Anh Le, Van Duy Nguyen & Van-Nam Do

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  1. Sy-Ta Ho
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  2. Hoang Anh Le
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  3. Van Duy Nguyen
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  4. Van-Nam Do
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Correspondence to Sy-Ta Ho or Van-Nam Do.

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Ho, ST., Le, H.A., Nguyen, V.D. et al. Electronic properties of slid bilayer graphene: effective models in low energy range. Eur. Phys. J. B 93, 190 (2020). https://doi.org/10.1140/epjb/e2020-10328-6

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