Influence of pressure on electronic and optical properties of phosphorus-doped ZnO

Regular Article
  • 9 Downloads

Abstract

In this work, the geometrical, electronic structure and optical properties of P-doped ZnO under high pressures have been investigated using first-principles methods. The pressure effects on the lattice parameters, electronic band structures, and partial density of states of crystalline P-doped ZnO are calculated up to 8 GPa. Moreover, the evolution of the dielectric function, absorption coefficient (αω)), reflectivity (R(ω)), and the real part of the refractive index (n(ω)) at high pressure are also presented.

Keywords

Statistical and Nonlinear Physics 

References

  1. 1.
    K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79, 988 (2001) ADSCrossRefGoogle Scholar
  2. 2.
    Y.K. Mishra, S. Kaps, A. Schuchardt, I. Paulowicz, X. Jin, D. Gedamu, S. Freitag, M. Claus, S. Wille, A. Kovalev, S.N. Gorb, R. Adelung, Part. Part. Syst. Charact. 30, 775 (2013) CrossRefGoogle Scholar
  3. 3.
    Y.K. Mishra, G. Modi, V. Cretu, V. Postica, O. Lupan, T. Reimer, I. Paulowicz, V. Hrkac, W. Benecke, L. Kienle, R. Adelung, Appl. Mater. Interfaces 7, 14303 (2015) CrossRefGoogle Scholar
  4. 4.
    A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki, Nat. Mater. 4, 42 (2005) ADSCrossRefGoogle Scholar
  5. 5.
    A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S.F. Chichibu, M. Kawasaki, Jpn. J. Appl. Phys. Part 2 44, L643 (2005) CrossRefGoogle Scholar
  6. 6.
    P.J. Li, Z.M. Liao, X.Z. Zhang, X.J. Zhang, H.C. Zhu, J.Y. Gao, K. Laurent, Y.L. Wang, N. Wang, D. Yu, Nano Lett. 9, 2513 (2009) ADSCrossRefGoogle Scholar
  7. 7.
    P. Biswas, P. Nath, D. Sanyal, P. Banerji, Curr. Appl. Phys. 15, 1256 (2015) ADSCrossRefGoogle Scholar
  8. 8.
    T. Aoki, Y. Hatanaka, D.C. Look, Appl. Phys. Lett. 76, 3257 (2000) ADSCrossRefGoogle Scholar
  9. 9.
    K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade, J. Appl. Phys. 79, 7983 (1996) ADSCrossRefGoogle Scholar
  10. 10.
    H. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hi-rano, H. Hosono, Solid State Electron. 47, 2261 (2003) ADSCrossRefGoogle Scholar
  11. 11.
    L.C. Chen, Y.J. Tu, Y.S. Wang, R.S. Kan, C.M. Huang, J. Photochem. Photobiol. A: Chem. 199, 170 (2008) CrossRefGoogle Scholar
  12. 12.
    A.S. Alshammari, L. Chi, X. Chen, A. Bagabas, D. Kramer, A. Alromaeh, Z. Jiang, RSC Adv. 5, 27690 (2015) CrossRefGoogle Scholar
  13. 13.
    G.S. Algharmdi, A.Z. Alzahrani, Physica B 407, 3975 (2012) ADSCrossRefGoogle Scholar
  14. 14.
    D.K. Hwang, H.S. Kim, J.H. Lim, J.Y. Oh, J.H. Yang, S.J. Park, K.K. Kim, Appl. Phys. Lett 86, 151917 (2005) ADSCrossRefGoogle Scholar
  15. 15.
    V. Sharma, M. Prasad, S. Jadkar, S. Pal, J. Mater. Sci.: Mater. Electron 1, 5192 (2016) Google Scholar
  16. 16.
    M.D. Segall, P.J.D. Lindan, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark, M.C. Payne, J. Phys.: Condens. Matter. 14, 2714 (2002) ADSGoogle Scholar
  17. 17.
    J.P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996) ADSCrossRefGoogle Scholar
  18. 18.
    J.P. Perdew, Y. Wang, Phys. Rev. B 45, 13244 (1992) ADSCrossRefGoogle Scholar
  19. 19.
    C. Klingshirn, Phys. Status Solid B 244, 3027 (2007) ADSCrossRefGoogle Scholar
  20. 20.
    B.J. Nagare, S. Chacko, D.G. Kanhere, J. Phys. Chem. A114, 2689 (2010) CrossRefGoogle Scholar
  21. 21.
    M.Q. Cai, Z. Yin, M.S. Zhang, Appl. Phys. Lett. 83, 2805 (2003) ADSCrossRefGoogle Scholar
  22. 22.
    S. Saha, T.P. Sinha, A. Mookerjee, Phys. Rev. B 62, 8828 (2000) ADSCrossRefGoogle Scholar
  23. 23.
    J.L. Lyons, A. Janotti, C.G. Van de Walle, Appl. Phys. Lett. 95, 252105 (2009) ADSCrossRefGoogle Scholar
  24. 24.
    C.L. Muhich, J.Y. WestcottIV, T. Fuerst, A.W. Weimer, C.B. Musgrave, J. Phys. Chem. C. 118, 27415 (2014) CrossRefGoogle Scholar
  25. 25.
    M.T. Uddin, Y. Nicolas, C. Olivier, L. Servant, T. Toupance, S. Li, A. Klein, W. Jaegermann, Phys. Chem. Chem. Phys. 17, 5090 (2015) CrossRefGoogle Scholar
  26. 26.
    T. Ohno, M. Akiyoshi, T. Umebaysshi, K. Asai, T. Mitsui, M. Matsumura, Appl. Catal. A: Gen. 265, 115 (2004) CrossRefGoogle Scholar
  27. 27.
    N.P. Herring, L.S. Panchakarla, M.S. El-Shall, Langmuir 30, 2230 (2014) CrossRefGoogle Scholar
  28. 28.
    C.L. Hsu, Y.D. Gao, Y.S. Chen, T.J. Hsueh, ACS Appl. Mater. Interfaces 6, 4277 (2014) CrossRefGoogle Scholar
  29. 29.
    L. Duan, P. Wang, X. Yu, X. Han, Y. Chen, P. Zhao, D. Li, R. Yao, Phys. Chem. Chem. Phys. 16, 4092 (2014) CrossRefGoogle Scholar
  30. 30.
    S. Cho, J.W. Jang, J.S. Lee, K.H. Lee, CrystEngComm 12, 3929 (2010) CrossRefGoogle Scholar
  31. 31.
    F. Urbach, Phys. Rev. 92, 1324 (1953) ADSCrossRefGoogle Scholar
  32. 32.
    S. Aksoy, Y. Caglar, S. Llican, M. Caglar, Opt. AplicataXL 1, 7 (2010) Google Scholar
  33. 33.
    T. Minami, T. Kakumu, Y. Takeda, S. Takata, Thin Solid Films 1, 290 (1996) Google Scholar
  34. 34.
    S. Horzum, E. Torun, T. Serin, F.M. Peeters, Philos. Mag. 17, 1743 (2016) ADSCrossRefGoogle Scholar

Copyright information

© EDP Sciences, SIF, Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Ling-Ping Xiao
    • 1
  • Xiao-Bin Li
    • 2
  • Li Zeng
    • 3
  • Xue Yang
    • 4
  1. 1.Jiangxi Science and Technology Normal UniversityNanchangP.R. China
  2. 2.Jiangxi University of TechnologyNanchangP.R. China
  3. 3.AVIC Jiangxi Hongdu Aviation Industry Group Corporation LimitedNanchangP.R. China
  4. 4.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of SciencesHefeiP.R. China

Personalised recommendations