Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field

  • Huseyin Sari
  • Esin Kasapoglu
  • Unal Yesilgul
  • Serpil Sakiroglu
  • Fatih Ungan
  • Ismail Sökmen
Regular Article

Abstract

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double δ-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the δ-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.

Keywords

Solid State and Materials 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag GmbH Germany 2017

Authors and Affiliations

  • Huseyin Sari
    • 1
  • Esin Kasapoglu
    • 2
  • Unal Yesilgul
    • 3
  • Serpil Sakiroglu
    • 4
  • Fatih Ungan
    • 3
  • Ismail Sökmen
    • 4
  1. 1.Faculty of Education, Department of Mathematical and Science Education, Cumhuriyet UniversitySivasTurkey
  2. 2.Faculty of Science, Department of Physics, Cumhuriyet UniversitySivasTurkey
  3. 3.Faculty of Technology, Department of Optical Engineering, Cumhuriyet UniversitySivasTurkey
  4. 4.Faculty of Science, Department of Physics, Dokuz Eylül UniversityİzmirTurkey

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