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Intense laser effects on the optical properties of asymmetric GaAs double quantum dots under applied electric field

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Abstract

We investigated the combined effects of a non-resonant intense laser field and a static electric field on the electronic structure and the nonlinear optical properties (absorption, optical rectification) of a GaAs asymmetric double quantum dot under a strong probe field excitation. The calculations were performed within the compact density-matrix formalism under steady state conditions using the effective mass approximation. Our results show that: (i) the electronic structure and optical properties are sensitive to the dressed potential; (ii) under applied electric fields, an increase of the laser intensity induces a redshift of the optical absorption and rectification spectra; (iii) the augment of the electric field strength leads to a blueshift of the spectra; (iv) for high electric fields the optical spectra show a shoulder-like feature, related with the occurrence of an anti-crossing between the two first excited levels.

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Authors and Affiliations

  1. University of Bucharest, Faculty of Physics, P.O. Box MG 11, Strada Atomistilor 405, Magurele 077125, Bucharest, Romania

    Doina Bejan

  2. Physics Department, Politehnica University of Bucharest, Bucharest, Romania

    Ecaterina Cornelia Niculescu

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  1. Doina Bejan
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  2. Ecaterina Cornelia Niculescu
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Correspondence to Doina Bejan.

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Bejan, D., Niculescu, E. Intense laser effects on the optical properties of asymmetric GaAs double quantum dots under applied electric field. Eur. Phys. J. B 89, 138 (2016). https://doi.org/10.1140/epjb/e2016-70115-6

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  • DOI: https://doi.org/10.1140/epjb/e2016-70115-6

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