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Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance

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Abstract

We show how a simple model nanoswitch can perform as a memory resistor. Its resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule’s heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f 2 → 1/f crossover, in agreement with recent experimental results.

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Authors and Affiliations

  1. Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK

    Sergey E. Savel’ev

  2. Dipartimento di Fisica, Universitá di Camerino, 62032, Camerino, Italy

    Fabio Marchesoni

  3. Hewlett-Packard Laboratories, 1501 Page Mill Road, 94304, California, USA

    Alexander M. Bratkovsky

  4. Department of Physics, University of California, Davis, One Shields Avenue, Davis, 95616, California, USA

    Alexander M. Bratkovsky

  5. Kapitza Institute for Physical Problems, Russian Academy of Sciences, Kosygina 2, 119334, Moscow, Russia

    Alexander M. Bratkovsky

Authors
  1. Sergey E. Savel’ev
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  2. Fabio Marchesoni
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  3. Alexander M. Bratkovsky
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Correspondence to Sergey E. Savel’ev.

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Savel’ev, S., Marchesoni, F. & Bratkovsky, A. Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance. Eur. Phys. J. B 86, 501 (2013). https://doi.org/10.1140/epjb/e2013-40966-4

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  • DOI: https://doi.org/10.1140/epjb/e2013-40966-4

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