The European Physical Journal B

, 86:467

Geometry and charge carrier induced stability in Casimir actuated nanodevices

Regular Article

DOI: 10.1140/epjb/e2013-40779-5

Cite this article as:
Esquivel-Sirvent, R. & Pérez-Pascual, R. Eur. Phys. J. B (2013) 86: 467. doi:10.1140/epjb/e2013-40779-5


In this work we demonstrate, that in Casimir actuated nanodevices, geometry and charge carriers concentration change the stability and the pull-in conditions that cause stiction. The stability is analyzed by calculating the bifurcation diagram of the capacitive switch as a function of plate thickness for Au and Si showing that previous calculations based on Lifshitz formula for half-spaces underestimated the stability conditions. Taking into account the size effect, we recalculate the bifurcation diagram for different metals and for Si with different carrier concentrations showing the change in the stability conditions.


Mesoscopic and Nanoscale Systems 

Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Instituto de Física, Universidad Nacional Autónoma de MéxicoMéxicoMexico

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