Abstract
The skutterudites are an excellent candidate for thermoelectric materials used in mechanic free heat pump and electric generator. Using the ab initio density functional theory we have calculated the electronic band structure and thermoelectric properties of skutterudite RuSb2Te. RuSb2Te compound belongs to an indirect band gap semiconductor. The density of states has a sharp upturn at the conduction band edge and is very low at the valence band top. This feature suggests that Seebeck coefficient is larger for n doped than for p doped RuSb2Te compound. The calculated Seebeck coefficient confirms this trend. It is in a qualitative agreement with the experiments if the temperature is not too high.
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References
G.J. Snyder, E.S. Toberer, Nat. Mater. 7, 105 (2008)
G.A. Slack, Solid State Phys. 34, 1 (1979)
P.S. Riseborough, Adv. Phys. 49, 257 (2000)
V. Jaccarina, G.K. Wertheim, J.H. Wernick, L.R. Walker, S. Arajs, Phys. Rev. 160, 476 (1967)
J.K. Freericks, D.O. Demchenko, A.V. Joura, V. Zlatic, Phys. Rev. B 68, 195120 (2003)
J.P. Heremans, V. Jovovic, E.S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, G.J. Snyder, Science 321, 554 (2008)
L.D. Dudkin, N.K. Abrikosov, Soviet Phys. Solid State 3, 126 (1956)
T. Caillat, A. Borshchevsky, J.-P. Fleurial, J. Appl. Phys. 80, 4442 (1996)
J.O. Sofo, G.D. Mahan, Phys. Rev. B 58, 15620 (1998)
P. Vaqueiro, G.G. Sobany, A.V. Powell, K.S. Knight, J. Solid State Chem. 179, 2047 (2006)
P. Vaqueiro, G.G. Sobany, A.V. Powel, Dalton Trans. 39, 1020 (2010)
F. Laufek, J. Návrátil, Powder Diffr. 26, 331 (2011)
J.P. Fleurial, T. Caillat, A. Borshchevsky, Proceedings of the 16th International Conference on Thermoelectrics, Dresden, Germany, 1997, pp. 1–11
J.P. Fleurial, Thermoelectric Materials Development, Jet Propulsion Lab report 25 (1998)
P. Blaha, K. Schwarz, G.K.H. Madsen, D. Kvasnicka, J. Luitz, WIEN2k, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties (Karlheinz Schwarz, Techn. Universitat Wien, Austria, 2001), ISBN 3-9501031-1-2
D. Kasinathan, A. Ormeci, K. Koch, U. Burkhardt, W. Schnelle, A. Leithe-Jasper, H. Rosner, New J. Phys. 11, 025023 (2009)
M. Schmitt, J. Malek, S.-L. Drechsler, H. Rosner, Phys. Rev. B 80, 205111 (2009)
G. Madsen, D. Singh, Comput. Phys. Commun. 175, 67 (2006)
M. Lundstrom, Fundamentals of Carrier transport, 2nd edn. (Cambridge University Press, Cambridge, 2000)
J. Návrátil, T. Plecháček, Č. Drašar, F. Laufek, J. Electron. Mater. 42, 1864 (2013)
T.J. Scheidemantel, C. Ambrosch-Draxl, T. Thonhauser, J.V. Badding, J.O. Sofo, Phys. Rev. B 68, 125210 (2003)
G.K.H. Madsen, K. Schwarz, P. Blaha, D.J. Singh, Phys. Rev. B 68, 125212 (2003)
T. Thonhauser, T.J. Scheidemantel, J.O. Sofo, Appl. Phys. Lett. 85, 558 (2004)
X. Gao, K. Uehara, D.D. Klug, S. Patchkovskii, J.S. Tse, T.M. Tritt, Phys. Rev. B 72, 125202 (2005)
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Kong, S., Zhang, W. & Shi, D. Theoretical investigation on the electronic and thermoelectric properties of RuSb2Te compound. Eur. Phys. J. B 86, 452 (2013). https://doi.org/10.1140/epjb/e2013-40335-5
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DOI: https://doi.org/10.1140/epjb/e2013-40335-5