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Layer stacking dependence on thermoelectric properties of massive Dirac fermions in bilayer graphene

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Abstract

We numerically study the thermoelectric transport in AB- and AA-stacked bilayer graphene in the presence of a strong magnetic field and disorder. In the AB-stacked case, we find that the thermoelectric conductivities display different asymptotic behaviors, depending on the ratio between the temperature and the width of the disorder-broadened Landau levels (LLs), similar to those of monolayer graphene. In the high temperature regime, the transverse thermoelectric conductivity α xy saturates to a universal value 5.54k B e/h at the center of each LL, and displays a linear temperature dependence at low temperatures. The calculated Nernst signal has a peak with a height of the order of k B /e, and the thermopower changes sign at the central LL. We attribute this unique behavior to the coexistence of particle and hole LLs. In the AA-stacked bilayer case, it is found that the thermoelectric transport properties are consistent with the behavior of a band insulator. The obtained results demonstrate the sensitivity of the thermoelectric conductivity to the band gap near the Dirac point.

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing, 210044, P.R. China

    Rong Ma

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  1. Rong Ma
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Ma, R. Layer stacking dependence on thermoelectric properties of massive Dirac fermions in bilayer graphene. Eur. Phys. J. B 86, 177 (2013). https://doi.org/10.1140/epjb/e2013-31136-y

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