Intra- and inter-tube exciton relaxation dynamics in high purity semiconducting and metallic single-walled carbon nanotubes
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We have measured the exciton and carrier dynamics in the high purity semiconducting (S-) and metallic (M-) single-walled carbon nanotubes (SWNTs) in the isolated and aggregated (bundled) forms. The exciton relaxation decay times are measured by using the pump-probe spectroscopy. For bundled samples, the relaxation time becomes shorter than that for isolated SWNTs sample, because of the existence of inter-tube relaxation. We estimate the relaxation rates from S-SWNT to S-SWNT and S-SWNT to M-SWNT using the decay times for isolated SWNTs, high purity S-SWNTs bundle, and doped S-SWNTs in high purity M-SWNTs bundle. For S-SWNTs, inter-tube relaxation plays an important role in the relaxation dynamics. However, for M-SWNTs, the inter-tube relaxation is not so important, and the transition energy and intensity of exciton in M-SWNTs is strongly affected by the photoexcited carriers which plays like as photo doping.