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Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

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Abstract

The transport properties of GaAs/δ〈Mn〉/GaAs/In x Ga1−x As/GaAs structures containing an In x Ga1−x As (x ≈ 0.2) quantum well (QW) and a Mn delta layer (DL) with relatively high content, about one Mn monolayer (ML), are studied. In these structures the DL is separated from the QW by GaAs spacer with thickness d s = 2–5 nm. All structures possess a non-metallic character of conductivity and display a maximum in the resistance temperature dependence R xx (T) at the temperature ≈ 46 K, which is usually associated with the Curie temperature T C of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes p H in the QW does not decrease below T C as one ordinary expects in similar systems. On the contrary, the dependence p H (T) experiences a minimum at T = 80–100 K depending on the spacer thickness, then increases at low temperatures more strongly when d s is smaller, and reaches a giant value p H = (1–2) × 1013 cm−2. The obtained results are interpreted in the terms of magnetic proximity effect of the DL on the QW, inducing spin polarization of the holes in the QW. Strong structural and magnetic disorder in the DL and in the QW, leading to phase segregation in them is taken into consideration. The high p H value is explained as a result of the compensation of the positive normal Hall effect component by the negative anomalous Hall effect component.

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Authors and Affiliations

  1. Russian Research Centre “Kurchatov Institute”, 123182, Moscow, Russia

    M. A. Pankov, B. A. Aronzon, V. V. Rylkov, A. B. Davydov, V. V. Tugushev, I. A. Likhachev & E. M. Pashaev

  2. Institute of Applied and Theoretical Electrodynamics, Russian Academy of Sciences, 127412, Moscow, Russia

    B. A. Aronzon

  3. Dipartimento di Fisica, Università di Roma “La Sapienza”, piazzale Aldo Moro, 2-00185, Roma, Italy

    S. Caprara

  4. Institute of Physics and Technology of RAS, Nakhimovskii Avenue 34, 117218, Moscow, Russia

    M. A. Chuev

  5. Lappeenranta University of Technology, Box 20, 53851, Lappeenranta, Finland

    E. Lähderanta

  6. Kotel’nikov Institute of Radio Engineering and Electronics, RAS, Fryazino, 141190, Moscow District, Russia

    V. V. Rylkov, A. S. Vedeneev & A. S. Bugaev

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  1. M. A. Pankov
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Correspondence to S. Caprara.

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Pankov, M.A., Aronzon, B.A., Rylkov, V.V. et al. Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content. Eur. Phys. J. B 85, 206 (2012). https://doi.org/10.1140/epjb/e2012-30149-4

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