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Local spin polarisation of electrons in Rashba semiconductor nanowires: effects of the bound state

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Abstract

The local spin polarisation (LSP) of electrons in two typical semiconductor nanowires under the modulation of Rashba spin-orbit interaction (SOI) is investigated theoretically. The influence of both the SOI- and structure-induced bound states on the LSP is taken into account via the spin-resolved lattice Green function method. It is discovered that high spin-density islands with alternative signs of polarisation are formed inside the nanowires due to the interaction between the bound states and the Rashba effective magnetic field. Further study shows that the spin-density islands caused by the structure-induced bound state exhibit a strong robustness against disorder. These findings may provide an efficient way to create local magnetic moments and store information in semiconductors.

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Authors and Affiliations

  1. School of Computer, Jiangxi University of Traditional Chinese Medicine, Nanchang, 330004, P.R. China

    X. B. Xiao & F. Li

  2. Institute for Advanced Study, Nanchang University, Nanchang, 330031, P.R. China

    X. B. Xiao & N. H. Liu

  3. Department of Physics, Tongji University, Shanghai, 200092, P.R. China

    Y. G. Chen

Authors
  1. X. B. Xiao
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  2. F. Li
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  3. Y. G. Chen
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  4. N. H. Liu
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Correspondence to N. H. Liu.

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Xiao, X.B., Li, F., Chen, Y.G. et al. Local spin polarisation of electrons in Rashba semiconductor nanowires: effects of the bound state. Eur. Phys. J. B 85, 112 (2012). https://doi.org/10.1140/epjb/e2012-20849-0

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  • DOI: https://doi.org/10.1140/epjb/e2012-20849-0

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