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De Haas-van Alphen effect, magnetization, magnetoresistance and magnetostriction of GdB4 as compared with TmB4

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Abstract.

De Haas-van Alphen (dHvA) effect measurements were performed on GdB4 single crystal (R 300 K/R 4.2 K ≈ 12) in AFM state from 1.5 to 4.2 K in magnetic fields up to 14 T. 12 main branches of the oscillations were observed in the frequency range (0.1 ÷ 28) × 102 T. The angular dependence of the dHvA spectrum suggests a strongly anisotropic Fermi surface. Corresponding cyclotron masses m* c are light, ranging from 0.2 to 0.8m 0. We studied additionally the magnetization of GdB4, linear and volume magnetostriction, and magnetoresistance of GdB4 in comparison with the same properties of TmB4 single crystal above 1.5 K in the field of 0 ÷ 14 T. At 4.2 K and H || ⟨110⟩ collinear to the GdB4 easy magnetization axis the volume magnetostriction revealed the lattice contraction with the field rise excluding the range of H ≈ (11 ÷ 13) T, where the lattice expansion is accompanied by a sharp magnetization increase due to the destruction of its non-collinear magnetic structure. The magnetostricive behavior in GdB4 and TmB4 is different due to the CEF effect.

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Authors and Affiliations

  1. International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 53-529, Wroclaw, Poland

    V. Pluzhnikov & V.I. Nizhankovskii

  2. B. Verkin Institute for Low Temperature Physics and Engineering of NASU, Lenin Ave.47, 61103, Kharkov, Ukraine

    V. Pluzhnikov

  3. I. Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky Str.3, 03680, Kiev, Ukraine

    A. Ievdokimova & N. Shitsevalova

Authors
  1. V. Pluzhnikov
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  2. V.I. Nizhankovskii
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  3. A. Ievdokimova
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  4. N. Shitsevalova
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Correspondence to N. Shitsevalova.

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Pluzhnikov, V., Nizhankovskii, V., Ievdokimova, A. et al. De Haas-van Alphen effect, magnetization, magnetoresistance and magnetostriction of GdB4 as compared with TmB4 . Eur. Phys. J. B 85, 251 (2012). https://doi.org/10.1140/epjb/e2012-20636-y

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  • DOI: https://doi.org/10.1140/epjb/e2012-20636-y

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