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Influence of longitudinal optical phonons on domain wall resistance in nanowires based on diluted magnetic semiconductors

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Abstract

In the present paper, the influence of longitudinal optical phonons on domain wall resistance in nanowires based on diluted magnetic semiconductors has been studied within the semiclassical approach. The analysis has been based on the Boltzmann transport equation within the relaxation time approximation. The modulation of the exchange and the impurity interactions by lattice vibrations have been taken into account and the hole-phonon interaction has also been considered. The results indicate that phonons have a considerable effect on increasing the domain wall resistance. The resistance enhancement is observed by increasing the temperature. The magnetic impurities are also effective on enhancing the domain wall resistance. In designing spintronics devices based on diluted magnetic semiconductors, considering the effects of phonons and magnetic impurities on the domain wall resistance is crucial.

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Authors and Affiliations

  1. Department of Physics, Shahid Beheshti University, G.C., Evin, 19839-63113, Tehran, Iran

    R. Majidi, M. M. Tehranchi & K. Ghafoori Tabrizi

  2. Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, 19839-63113, Tehran, Iran

    M. M. Tehranchi

  3. Department of Physics, Azarbaijan University of Tarbiat Moallem, 53714-161, Tabriz, Iran

    A. Phirouznia

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  1. R. Majidi
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  2. M. M. Tehranchi
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  3. A. Phirouznia
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  4. K. Ghafoori Tabrizi
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Correspondence to M. M. Tehranchi.

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Majidi, R., Tehranchi, M.M., Phirouznia, A. et al. Influence of longitudinal optical phonons on domain wall resistance in nanowires based on diluted magnetic semiconductors. Eur. Phys. J. B 81, 209–213 (2011). https://doi.org/10.1140/epjb/e2011-20089-x

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  • DOI: https://doi.org/10.1140/epjb/e2011-20089-x

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