Front-end process modeling in silicon

  • L. Pelaz
  • L. A. Marqués
  • M. Aboy
  • P. López
  • I. Santos
Colloquia

Abstract

Front-end processing mostly deals with technologies associated to junction formation in semiconductor devices. Ion implantation and thermal anneal models are key to predict active dopant placement and activation. We review the main models involved in process simulation, including ion implantation, evolution of point and extended defects, amorphization and regrowth mechanisms, and dopant-defect interactions. Hierarchical simulation schemes, going from fundamental calculations to simplified models, are emphasized in this Colloquium. Although continuum modeling is the mainstream in the semiconductor industry, atomistic techniques are starting to play an important role in process simulation for devices with nanometer size features. We illustrate in some examples the use of atomistic modeling techniques to gain insight and provide clues for process optimization.

References

  1. 1.
    International Technology Roadmap for Semiconductors, http://www.itrs.net/
  2. 2.
    E. Chason, S.T. Picraux, J.M. Poate, J.O. Borland, M.I. Current, T.D. de la Rubia, D.J. Eaglesham, O.W. Holland, M.E. Law, C.W. Magee et al., J. Appl. Phys. 81, 6513 (1997)ADSGoogle Scholar
  3. 3.
    M.J. Caturla, T.D. de la Rubia, L.A. Marqués, G.H. Gilmer, Phys. Rev. B 54, 16683 (1996)ADSGoogle Scholar
  4. 4.
    S.E. Donnelly, R.C. Birtcher, V.M. Vishnyakov, G. Carter, Appl. Phys. Lett. 82, 1860 (2003)ADSGoogle Scholar
  5. 5.
    I. Santos, L.A. Marqués, L. Pelaz, P. López, M. Aboy, J. Barbolla, Mater. Sci. Eng. B 124–125, 372 (2005)Google Scholar
  6. 6.
    S. Prussin, D.I. Margolese, R.N. Tauber, J. Appl. Phys. 57, 180 (1985)ADSGoogle Scholar
  7. 7.
    W.K. Hofker, H. Werner, D.P. Oosthoek, H.A.M. de Grefte, Appl. Phys. 2, 165 (1973)Google Scholar
  8. 8.
    D.J. Eaglesham, P.A. Stolk, H.J. Gossmann, J.M. Poate, Appl. Phys. Lett. 65, 2305 (1994)ADSGoogle Scholar
  9. 9.
    P.M. Rousseau, P.B. Griffin, J.D. Plummer, Appl. Phys. Lett. 65, 578 (1994)ADSGoogle Scholar
  10. 10.
    P.A. Stolk, H.J.G.D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraiz, J.M. Poate, H.S. Luftman, T.E. Haynes, J. Appl. Phys. 81, 6031 (1997)ADSGoogle Scholar
  11. 11.
    L. Pelaz, M. Jaraiz, G.H. Gilmer, H.J. Gossmann, C.S. Rafferty, D.J. Eaglesham, J.M. Poate, Appl. Phys. Lett. 70, 2285 (1997)ADSGoogle Scholar
  12. 12.
    N.E.B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, J.G.M. van Berkum, F. Cristiano, A. Claverie, M. Jaraiz, Phys. Rev. Lett. 82, 4460 (1999)ADSGoogle Scholar
  13. 13.
    S. Whelan, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, A. La-Magna, E. Napolitani, J. Appl. Phys. 90, 3873 (2001)ADSGoogle Scholar
  14. 14.
    S.C. Jain, W. Schoenmaker, R. Lindsay, P.A. Stolk, S. Decoutere, M. Willander, H.E. Maes, J. Appl. Phys. 91, 8919 (2002)ADSGoogle Scholar
  15. 15.
    S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, V. Soncini, J. Appl. Phys. 94, 4950 (2003)ADSGoogle Scholar
  16. 16.
    K. Mistry, M. Armstrong, C. Auth, S. Cea, T. Coan, T. Ghani, T. Hoffmann, A. Murthy, J. Sandford, R. Shaheed et al., in Symposium on VLSI Technology Digest of Technical Papers (2004), pp. 50–51Google Scholar
  17. 17.
    D. Schroder, IEEE Trans. Elec. Dev. 44, 160 (1997)ADSGoogle Scholar
  18. 18.
    A. Argawal, A.T. Fiory, H.J. Gossmann, C.S. Rafferty, P. Frisella, Mater. Sci. Semicond. Process. 1, 237 (1998)Google Scholar
  19. 19.
    R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, W. Vandervorst, A. Mayur, J. Ross et al., Mater. Res. Soc. Symp. Proc. 765, D7.4.1 (2003)Google Scholar
  20. 20.
    M.P. Smith, R.A. McMahon, K.A. Seffen, D. Panknin, M. Voelskow, W. Skorupa, Thermal and Stress Modeling for Flash Lamp Crystallization of Amorphous Silicon Films, in Mat. Res. Soc. Symp. Proc. (2006), Vol. 910, p. A21Google Scholar
  21. 21.
    A. Colin, P. Morin, F. Cacho, H. Bono, R. Beneyton, M. Bidaud, D. Mathiot, E. Fogarassy, Mat. Sci. Eng. B 154-155, 31 (2008)Google Scholar
  22. 22.
    J.Y. Jin, J. Liu, U. Jeong, S. Mehta, K. Jones, J. Vac. Sci. Technol. B 20, 422 (2002)Google Scholar
  23. 23.
    W. Lerch, S. Paul, J. Niess, F. Cristiano, Y. Lamrani, P. Calvo, N. Cherkashin, D.F. Downey, E.A. Arevalo (2004)Google Scholar
  24. 24.
    B.J. Pawlak, R. Surdeanu, B. Colombeau, A.J. Smith, N.E.B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, F. Cristiano, Appl. Phys. Lett. 84, 2055 (2004)ADSGoogle Scholar
  25. 25.
    V. Privitera, A.L. Magna, G. Fortunato, M. Camalleri, A. Magri, F. Simon, B.G. Svensson, Mat. Sci. Eng. B 114–115, 92 (2004)Google Scholar
  26. 26.
    Y. Takamura, S.H. Jain, P.B. Griffin, J.D. Plummer, J. Appl. Phys. 92, 230 (2002)ADSGoogle Scholar
  27. 27.
    Y. Takamura, P.B. Griffin, J.D. Plummer, J. Appl. Phys. 92, 235 (2002)ADSGoogle Scholar
  28. 28.
    C. Claeys, E. Simoen, Germanium-based Technologies: From Materials to Devices (Elsevier, Amsterdam, 2007)Google Scholar
  29. 29.
    N. Goel, D. Heh, S. Koveshnikov, I. Ok, S. Oktyabrsky, V. Tokranov, R. Kambhampati, M. Yakimov, Y. Sun, P. Pianetta et al., in IEDM Technical Digest (2008)Google Scholar
  30. 30.
    T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus et al., A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors, in IEDM Technical Digest (2003)Google Scholar
  31. 31.
    M.J. Aziz, Appl. Phys. Lett. 70, 2810 (1997)ADSGoogle Scholar
  32. 32.
    A. Pakfar, Mat. Sci. Eng. B 89, 225 (2002)Google Scholar
  33. 33.
    N.E.B. Cowern, Phys. Rev. Lett. 99, 155903 (2007)ADSGoogle Scholar
  34. 34.
    C. Ahn, N. Bennett, S.T. Dunham, N.E.B. Cowern, Phys. Rev. B 79, 073201 (2009)ADSGoogle Scholar
  35. 35.
    A.L. Magna, P. Alippi, V. Privitera, G. Fortunato, M. Camalleri, B. Svensson, J. Appl. Phys. 95, 4806 (2004)ADSGoogle Scholar
  36. 36.
    A.L. Magna, P. Alippi, V. Privitera, G. Fortunato, Appl. Phys. Lett. 86, 161905 (2005)ADSGoogle Scholar
  37. 37.
    A.L. Magna, V. Privitera, G. Fortunato, M. Cuscuna, B.G. Svensson, E. Monakhov, K. Kuitunen, J. Slotte, F. Tuomisto, Phys. Rev. B 75, 235201 (2007)ADSGoogle Scholar
  38. 38.
    L.A. Marqués, L. Pelaz, P. López, M. Aboy, I. Santos, J. Barbolla, Mat. Sci. Eng. B 124–125, 72 (2005)Google Scholar
  39. 39.
    FLOOPS (FLorida Object Oriented Device and Process Simulator), http://www.flooxs.tec.ufl.edu/
  40. 40.
    M.E. Law, S.M. Cea, Comput. Mat. Sci. 12, 289 (1998)Google Scholar
  41. 41.
    C. Rafferty, R.K. Smith, CMES-Comp. Model. Eng. 1, 151 (2000)Google Scholar
  42. 42.
    T. Noda, W. Vandervorst, S. Felch, V. Parihar, C. Vranckena, S. Severi, A. Falepin, T. Janssens, H. Bender, B.V. Daele et al., IEDM Technical Digest (2006), p. 1Google Scholar
  43. 43.
    K.R.C. Mok, B. Colombeau, F. Benistant, R.S. Teo, S.H. Yeong, B. Yang, M. Jaraiz, S.S. Chu, IEEE Transac. Electron Devices 54, 2155 (2007)ADSGoogle Scholar
  44. 44.
    M. Jaraiz, P. Castrillo, R. Pinacho, J.E. Rubio, IEDM Technical Digest (2007), p. 951Google Scholar
  45. 45.
    L. Pelaz, R. Duffy, M. Aboy, L.A. Marqués, P. López, I. Santos, B.J. Pawlak, M.J.H. van Dal, B. Duriez, T. Merelle et al., in IEDM Technical Digest (2008), p. 535Google Scholar
  46. 46.
    M. Jaraiz, P. Castrillo, R. Pinacho, I. Martín-Bragado, J. Barbolla, in Simulation of Semiconductor Processes and Devices, edited by D. Tsoukalas, C. Tsamis (Springer-Verlag, Wien, 2001), p. 10Google Scholar
  47. 47.
    L. Pelaz, L.A. Marqués, M. Aboy, P. López, J. Barbolla, Comp. Mat. Sci. 33, 92 (2005)Google Scholar
  48. 48.
    P.E. Blöchl, E. Smargiassi, R. Car, D.B. Laks, W. Andreoni, S.T. Pantelides, Phys. Rev. Lett. 70, 2435 (1993)ADSGoogle Scholar
  49. 49.
    K. Ohno, K. Esfarjani, Y. Kawazoe, Computational Materials Science: from ab initio to Monte Carlo methods (Springer-Verlag, Berlin, 1999)Google Scholar
  50. 50.
    M. Born, J.R. Oppenheimer, Ann. der Physik 84, 457 (1927)ADSGoogle Scholar
  51. 51.
    D.R. Hartree, Proc. Cambridge Philos. Soc. 24, 89 (1928)Google Scholar
  52. 52.
    V. Fock, Z. f. Physik 61, 126 (1930)ADSGoogle Scholar
  53. 53.
    J.C. Slater, Phys. Rev. 35, 210 (1930)ADSGoogle Scholar
  54. 54.
    P. Hohenberg, W. Kohn, Phys. Rev. 136, B864 (1964)MathSciNetADSGoogle Scholar
  55. 55.
    W. Kohn, Rev. Mod. Phys. 71, 1253 (1999)ADSGoogle Scholar
  56. 56.
    S.J. Clark, G.J. Ackland, Phys. Rev. B 56, 47 (1997)ADSGoogle Scholar
  57. 57.
    J.L. Mercer, J.S. Nelson, A.F. Wright, E.B. Stechel, Mod. Sim. Mat. Sci. Eng. 6, 1 (1998)ADSGoogle Scholar
  58. 58.
    O.K. Al-Mushadani, R.J. Needs, Phys. Rev. B 68, 235205 (2003)ADSGoogle Scholar
  59. 59.
    F. Cargnoni, C. Gatti, L. Colombo, Phys. Rev. B 57, 170 (1998)ADSGoogle Scholar
  60. 60.
    C.S. Nichols, C.G.V. de Walle, S.T. Pantelides, Phys. Rev. B 40, 5484 (1989)ADSGoogle Scholar
  61. 61.
    M. Ramamoorthy, S.T. Pantelides, Phys. Rev. Lett. 76, 4753 (1996)ADSGoogle Scholar
  62. 62.
    W. Windl, M.M. Bunea, R. Stumpf, S.T. Dunham, M.P. Masquelier, Phys. Rev. Lett. 83, 4345 (1999)ADSGoogle Scholar
  63. 63.
    B. Sadigh, T.J. Lenosky, S.K. Theiss, M.J. Caturla, Phys. Rev. Lett. 83, 4341 (1999)ADSGoogle Scholar
  64. 64.
    J. Zhu, T.D. de la Rubia, L.H. Yang, C. Mailhiot, G.H. Gilmer, Phys. Rev. B 54, 4741 (1996)ADSGoogle Scholar
  65. 65.
    X.Y. Liu, W. Windl, M.P. Masquelier, Appl. Phys. Lett. 77, 2018 (2000)ADSGoogle Scholar
  66. 66.
    T.J. Lenosky, B. Sadigh, S.K. Theiss, M.J. Caturla, T.D. de la Rubia, Appl. Phys. Lett. 77, 1834 (2000)ADSGoogle Scholar
  67. 67.
    N.W. Ashcroft, N.D. Mermin, Solid State Physics (HRW International Editions, New York, 1976)Google Scholar
  68. 68.
    F. Bloch, Z. f. Physik 52, 555 (1928)ADSGoogle Scholar
  69. 69.
    L. Colombo, Ann. Rev. Mater. Res. 32, 271 (2005)Google Scholar
  70. 70.
    W.A. Harrison, Electronic Structure and the Properties of Solids (Dover, New York, 1989)Google Scholar
  71. 71.
    D.J. Chadi, M.L. Cohen, Phys. Status Solidi B 68, 405 (1975)Google Scholar
  72. 72.
    L. Goodwin, A.J. Skinner, D.G. Pettifor, Europhys. Lett. 9, 701 (1989)ADSGoogle Scholar
  73. 73.
    I. Kwon, R. Biswas, C.Z. Wang, K.M. Ho, C.M. Soukoulis, Phys. Rev. B 49, 7242 (1994)ADSGoogle Scholar
  74. 74.
    M. Tang, L. Colombo, J. Zhu, T.D. de la Rubia, Phys. Rev. B 55, 14279 (1997)ADSGoogle Scholar
  75. 75.
    M.T. Zawadzki, W. Luo, P. Clancy, Phys. Rev. B 63, 205205 (2001)ADSGoogle Scholar
  76. 76.
    L.J. Munro, D.J. Wales, Phys. Rev. B 59, 3969 (1999)ADSGoogle Scholar
  77. 77.
    C.Z. Wang, C.T. Chan, K.M. Ho, Phys. Rev. Lett. 66, 189 (1991)ADSGoogle Scholar
  78. 78.
    E.G. Song, E. Kim, Y.H. Lee, Y.G. Hwang, Phys. Rev. B 48, 1486 (1993)ADSGoogle Scholar
  79. 79.
    A. Jääskeläinen, L. Colombo, R. Nieminen, Phys. Rev. B 64, 233203 (2001)Google Scholar
  80. 80.
    D.A. Richie, J. Kim, S.A. Barr, K.R.A. Hazzard, R. Hennig, J.W. Wilkins, Phys. Rev. Lett. 92, 045501 (2004)ADSGoogle Scholar
  81. 81.
    M. Cogoni, B.P. Uberuaga, A.F. Voter, L. Colombo, Phys. Rev. B 71, 121203 (2005)ADSGoogle Scholar
  82. 82.
    J. Kim, J.W. Wilkins, F.S. Khan, A. Canning, Phys. Rev. B 55, 16186 (1997)ADSGoogle Scholar
  83. 83.
    M. Kohyama, S. Takeda, Phys. Rev. B 51, 13111 (1995)ADSGoogle Scholar
  84. 84.
    P. Alippi, L. Colombo, Phys. Rev. B 62, 1815 (2000)ADSGoogle Scholar
  85. 85.
    W. Luo, P.B. Rasband, P. Clancy, B.W. Roberts, J. Appl. Phys. 84, 2476 (1998)ADSGoogle Scholar
  86. 86.
    W. Luo, P. Clancy, J. Appl. Phys. 89, 1596 (2001)ADSGoogle Scholar
  87. 87.
    F.H. Stillinger, T.A. Weber, Phys. Rev. B 31, 5262 (1985)ADSGoogle Scholar
  88. 88.
    J. Tersoff, Phys. Rev. Lett. 56, 632 (1986)ADSGoogle Scholar
  89. 89.
    J. Tersoff, Phys. Rev. B 38, 9902 (1988)ADSGoogle Scholar
  90. 90.
    J. Tersoff, Phys. Rev. B 39, 5566 (1989)ADSGoogle Scholar
  91. 91.
    R. Biswas, D.R. Hamann, Phys. Rev. Lett. 55, 2001 (1985)ADSGoogle Scholar
  92. 92.
    E. Kaxiras, K.C. Pandey, Phys. Rev. B 38, 12736 (1988)ADSGoogle Scholar
  93. 93.
    B.W. Dodson, Phys. Rev. B 35, 2795 (1987)ADSGoogle Scholar
  94. 94.
    J. Wang, A. Rockett, Phys. Rev. B 43, 12571 (1991)ADSGoogle Scholar
  95. 95.
    M.I. Baskes, J.S. Nelson, A.F. Wright, Phys. Rev. B 40, 6085 (1989)ADSGoogle Scholar
  96. 96.
    M.I. Baskes, Phys. Rev. B 46, 2727 (1992)ADSGoogle Scholar
  97. 97.
    T.J. Lenosky, B. Sadigh, E. Alonso, V.V. Bulatov, T.D. de la Rubia, J. Kim, A.F. Woter, J.D. Kress, Modelling Simul. Mater. Sci. Eng. 8, 825 (2000)ADSGoogle Scholar
  98. 98.
    M.Z. Bazant, E. Kaxiras, J.F. Justo, Phys. Rev. B 56, 8542 (1997)ADSGoogle Scholar
  99. 99.
    H. Balamane, T. Halicioglu, W.A. Tiller, Phys. Rev. B 46, 2250 (1992)ADSGoogle Scholar
  100. 100.
    S.T. Cook, P. Clancy, Phys. Rev. B 47, 7686 (1993)ADSGoogle Scholar
  101. 101.
    C. Krzeminski, Q. Brulin, V. Cuny, E. Lecat, E. Lampin, F. Cleri, J. Appl. Phys. 101, 123506 (2007)ADSGoogle Scholar
  102. 102.
    L.A. Marqués, L. Pelaz, P. Castrillo, J. Barbolla, Phys. Rev. B 71, 085204 (2005)ADSGoogle Scholar
  103. 103.
    P.J. Ungar, T. Takai, T. Halicioglu, W.A. Tiller, J. Vac. Sci. Technol. A 11, 224 (1994)ADSGoogle Scholar
  104. 104.
    P.J. Ungar, T. Halicioglu, W.A. Tiller, Phys. Rev. B 50, 7344 (1994)ADSGoogle Scholar
  105. 105.
    M. Posselt, F. Gao, H. Bracht, Phys. Rev. B 78, 035208 (2008)ADSGoogle Scholar
  106. 106.
    M. Posselt, F. Gao, D. Zwicker, Phys. Rev. B 71, 245202 (2005)ADSGoogle Scholar
  107. 107.
    K. Nishihira, T. Motooka, Phys. Rev. B 66, 233310 (2002)ADSGoogle Scholar
  108. 108.
    L.A. Marqués, L. Pelaz, P. López, I. Santos, M. Aboy, Phys. Rev. B 76, 153201 (2007)ADSGoogle Scholar
  109. 109.
    A. Mattoni, L. Colombo, Phys. Rev. B 78, 075408 (2008)ADSGoogle Scholar
  110. 110.
    L.A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy, Phys. Rev. B 78, 193201 (2008)ADSGoogle Scholar
  111. 111.
    T.D. de la Rubia, G.H. Gilmer, Phys. Rev. Lett. 74, 2507 (1995)ADSGoogle Scholar
  112. 112.
    K. Nordlund, M. Ghaly, R.S. Averback, M.J. Caturla, T.D. de la Rubia, J. Tarus, Phys. Rev. B 57, 7556 (1998)ADSGoogle Scholar
  113. 113.
    K.M. Beardmore, N. Grønbech-Jensen, Phys. Rev. B 60, 12610 (1999)ADSGoogle Scholar
  114. 114.
    L.A. Marqués, L. Pelaz, I. Santos, V.C. Venezia, Phys. Rev. B 74, 201201 (2006)ADSGoogle Scholar
  115. 115.
    L.M. Howe, M.H. Rainville, H.K. Haugen, D.A. Thompson, Nucl. Instrum. Methods 170, 419 (1980)ADSGoogle Scholar
  116. 116.
    S. Ihara, S. Itoh, J. Kitakami, Phys. Rev. B 58, 10736 (1998)ADSGoogle Scholar
  117. 117.
    R. Smith, M. Shaw, R.P. Webb, M.A. Foad, J. Appl. Phys. 83, 3148 (1998)ADSGoogle Scholar
  118. 118.
    T. Aoki, J. Matsuo, G. Takaoka, N. Toyoda, I. Yamada, Nucl. Instrum. Methods Phys. Res. B 206, 855 (2003)ADSGoogle Scholar
  119. 119.
    N.E.B. Cowern, D.J. Godfrey, D.E. Sykes, Appl. Phys. Lett. 49, 1711 (1986)ADSGoogle Scholar
  120. 120.
    L. Pelaz, G.H. Gilmer, H.J. Gossmann, C.S. Rafferty, M. Jaraiz, J. Barbolla, Appl. Phys. Lett. 74, 3657 (1999)ADSGoogle Scholar
  121. 121.
    M. Aboy, L. Pelaz, L.A. Marqués, P. López, J. Barbolla, R. Duffy, V.C. Venezia, P.B. Griffin, Appl. Phys. Lett. 86, 031908 (2005)ADSGoogle Scholar
  122. 122.
    J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon VLSI Technology. Fundamentals, Practice and Modeling (Prentice Hall, 2000)Google Scholar
  123. 123.
    F. Jahnel, I. Ryssel, G. Prinke, K. Hoffmann, K. Mijller, J. Biersack, R. Henkelmann, Nucl. Instrum. Methods 182–183, 223 (1981)Google Scholar
  124. 124.
    D.G. Ashworth, R. Oven, B. Mundin, J. Phys. D 23, 870 (1990)ADSGoogle Scholar
  125. 125.
    K. Suzuki, R. Sudo, T. Feudel, W. Fichtner, IEEE Trans. Elec. Dev. 47, 44 (2000)ADSGoogle Scholar
  126. 126.
    C. Park, K.M. Klein, A.F. Tasch, Solid State Electronics 33, 645 (1990)ADSGoogle Scholar
  127. 127.
    S. Morris, S.H. Yang, D. Lim, C. Park, K. Klein, M. Manassian, A.F. Tasch, IEEE Transactions on Semiconductor Manufacturing 8, 408 (1995)Google Scholar
  128. 128.
    H. Goldstein, Classical Mechanics, 3rd edn. (Addison-Wesley, Reading, MA, 2000)Google Scholar
  129. 129.
    M.T. Robinson, I.M. Torrens, Phys. Rev. B 9, 5008 (1974)ADSGoogle Scholar
  130. 130.
    J.F. Ziegler, Ion Implantation: Science and Technology (Academic Press, San Diego, 1988)Google Scholar
  131. 131.
    J.J. Loferski, P. Rappaport, Phys. Rev. 98, 1861 (1955)ADSGoogle Scholar
  132. 132.
    L.A. Miller, D.K. Brice, A.K. Prinja, S.T. Picraux, Phys. Rev. B 49, 16953 (1994)ADSGoogle Scholar
  133. 133.
    M. Sayed, J.H. Jefferson, A.B. Walker, A.G. Cullis, Nucl. Instrum. Methods Phys. Res. B 102, 232 (1995)ADSGoogle Scholar
  134. 134.
    M. Mazzarolo, L. Colombo, G. Lulli, E. Albertazzi, Phys. Rev. B 63, 195207 (2001)ADSGoogle Scholar
  135. 135.
    E. Hölmstrom, A. Kuronen, K. Nordlund, Phys. Rev. B 78, 045202 (2008)ADSGoogle Scholar
  136. 136.
    SRIM documentation, www.srim.org
  137. 137.
    UT-MARLOWE documentation, http://homer.mer.utexas.edu/
  138. 138.
    J.M. Hernández-Mangas, J. Arias, L. Bailón, M. Jaraíz, J. Barbolla, J. Appl. Phys. 91, 658 (2002)ADSGoogle Scholar
  139. 139.
    K. Nordlund, N. Runeberg, D. Sundholm, Nucl. Instrum. Methods Phys. Res. B 132, 45 (1997)ADSGoogle Scholar
  140. 140.
    A. Sommerfeld, Z. f. Physik 77, 722 (1931)Google Scholar
  141. 141.
    G. Molière, Z. f. Naturforsch A2, 133 (1947)ADSGoogle Scholar
  142. 142.
    W. Lenz, Z. f. Physik 77, 713 (1947)ADSGoogle Scholar
  143. 143.
    J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985)Google Scholar
  144. 144.
    L. Rubin, J. Poate, The Industrial Physicist 9, 12 (2003)Google Scholar
  145. 145.
    A. Chettah, H. Kucal, Z.G. Wang, M. Kac, A. Meftah, M. Toulemonde, Nucl. Instrum. Methods Phys. Res. B 267, 2719 (2009)ADSGoogle Scholar
  146. 146.
    O.B. Firsov, Zh. Éksp. Teor. Fiz. 34, 1517 (1959)Google Scholar
  147. 147.
    O.B. Firsov, Sov. Phys. JETP 9, 1076 (1959)Google Scholar
  148. 148.
    J. Lindhard, M. Scharff, Phys. Rev. 124, 128 (1961)ADSGoogle Scholar
  149. 149.
    J. Lindhard, M. Scharff, H.E. Schiott, Dan. Vidensk. Seksk. Mat. Fys. Medd. 33, 1 (1963)Google Scholar
  150. 150.
    W. Brandt, M. Kitagawa, Phys. Rev. B 25, 5631 (1982)ADSGoogle Scholar
  151. 151.
    D. Cai, N. Grøbech-Jensen, C.M. Snell, K.M. Beardmore, Phys. Rev. B 54, 17147 (1996)ADSGoogle Scholar
  152. 152.
    J. Sillanpää, K. Nordlund, J. Keinonen, Phys. Rev. B 62, 3109 (2000)ADSGoogle Scholar
  153. 153.
    K.M. Beardmore, N. Grøbech-Jensen, Phys. Rev. E 57, 7278 (1998)ADSGoogle Scholar
  154. 154.
    M. Jaraiz, L. Pelaz, E. Rubio, J. Barbolla, G.H. Gilmer, D.J. Eaglesham, H.J. Gossmann, J.M. Poate, Mater. Res. Soc. Symp. Proc. 54, 532 (1998)Google Scholar
  155. 155.
    G. Hobler, G. Otto, D. Kovač, L. Palmetshofer, K. Mayerhofer, K. Piplits, Nucl. Instrum. Methods Phys. Res. B 228, 360 (2005)ADSGoogle Scholar
  156. 156.
    See for example description of the ‘Kinetic Adaptive Damage Model’ of UT-MARLOWE, http://homer.mer. utexas.edu
  157. 157.
    L.M. Howe, M.H. Rainville, Nucl. Instrum. Methods 182/183, 143 (1981)Google Scholar
  158. 158.
    P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)ADSGoogle Scholar
  159. 159.
    G. Hobler, A. Simionescu, L. Pametshofer, C. Tian, G. Stingeder, J. Appl. Phys. 77, 3697 (1995)ADSGoogle Scholar
  160. 160.
    G. Hobler, Nucl. Instrum. Methods Phys. Res. B 96, 155 (1995)ADSGoogle Scholar
  161. 161.
    For example, description of the ‘Kinchin-Pease Damage Model’ of UT-MARLOWE, http://homer.mer.utexas.edu
  162. 162.
    J.M. Hernández-Mangas, J. Arias, L.A. Marqués, A. Ruiz-Bueno, L. Bailón, Nucl. Instrum. Methods Phys. Res. B 228, 235 (2005)ADSGoogle Scholar
  163. 163.
    S.H. Yang, S. Morris, S. Tian, K. Karab, A.F. Tasch, P.M. Echenique, R. Capaz, J. Joannopoulos, Mat. Res. Soc. Symp. Proc. 389, 77 (1995)Google Scholar
  164. 164.
    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr, IEEE Trans. Semic. Manuf. 8, 402 (1995)Google Scholar
  165. 165.
    M. Posselt, Radiat. Eff. Defects Solids 130, 87 (1994)Google Scholar
  166. 166.
    J. Arias, M. Jaraiz, L. Pelaz, L. Bailón, J. Barbolla, Nucl. Instrum. Methods Phys. Res. B 102, 228 (1995)ADSGoogle Scholar
  167. 167.
    J. Arias, M. Jaraiz, J.E. Rubio, L. Pelaz, L.A. Marqués, J. Barbolla, J. Mat. Sci. Tech. 11, 1191 (1995)Google Scholar
  168. 168.
    K. Gärtner, D. Stock, B. Weber, G. Betz, M. Hautala, G. Hobler, M. Hou, S. Arite, W. Eckstein, J.J. Jiménez-Rodríguez et al., Nucl. Instrum. Methods Phys. Res. B 102, 183 (1995)ADSGoogle Scholar
  169. 169.
    K. Nordlund, Comp. Mater. Sci. 3, 448 (1995)Google Scholar
  170. 170.
    I. Santos, L.A. Marqués, L. Pelaz, Phys. Rev. B 74, 174115 (2006)ADSGoogle Scholar
  171. 171.
    T. Aoki, J. Matsuo, G. Takaoka, Nucl. Instrum. Methods Phys. Res. B 202, 278 (2003)ADSGoogle Scholar
  172. 172.
    R.P. Webb, S.H. Winston, R.M. Gwilliam, B.J. Sealy, G. Boudreault, C. Jeynes, K.J. Kirkby, Nucl. Instrum. Methods Phys. Res. B 202, 143 (2003)ADSGoogle Scholar
  173. 173.
    T. Aoki, J. Matsuo, G. Takaoka, N. Toyoda, I. Yamada, Nucl. Instrum. Methods Phys. Res. B 206, 855 (2006)ADSGoogle Scholar
  174. 174.
    J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy et al., in International Workshop on Junction Technology (2006), p. 4Google Scholar
  175. 175.
    J. Borland, H. Kiyama, in Proceedings of the 17th International Conference on Ion Implantation Technology (2008), Vol. 1066, p. 63ADSGoogle Scholar
  176. 176.
    R. Smith, D.E. Harrison, B.J. Garrison, Phys. Rev. B 40, 93 (1989)ADSGoogle Scholar
  177. 177.
    H. Zhu, Nucl. Instrum. Methods Phys. Res. B 83, 334 (1993)ADSGoogle Scholar
  178. 178.
    L.A. Marqués, J.E. Rubio, M. Jaraíz, L. Enríquez, J. Barbolla, Nucl. Instrum. Methods Phys. Res. B 102, 7 (1995)ADSGoogle Scholar
  179. 179.
    M. Jaraíz, G.H. Gilmer, D.M. Stock, T.D. de la Rubia, Nucl. Instrum. Methods Phys. Res. B 102, 180 (1995)ADSGoogle Scholar
  180. 180.
    M. Posselt, Mater. Sci. Semicond. Process. 3, 317 (2000)Google Scholar
  181. 181.
    G. Hobler, G. Otto, Nucl. Instrum. Methods Phys. Res. B 206, 81 (2003)ADSGoogle Scholar
  182. 182.
    D. Kova<c, G. Otto, G. Hobler, Nucl. Instrum. Methods Phys. Res. B 228, 226 (2005)ADSGoogle Scholar
  183. 183.
    D. Kova<c, G. Hobler, Nucl. Instrum. Methods Phys. Res. B 267, 1229 (2009)ADSGoogle Scholar
  184. 184.
    I. Santos, L.A. Marqués, L. Pelaz, P. López, J. Appl. Phys. 105, 083530 (2009)ADSGoogle Scholar
  185. 185.
    P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61, 289 (1989)ADSGoogle Scholar
  186. 186.
    T.Y. Tan, U. Gösele, Appl. Phys. A: Solids Surf. 37, 1 (1985)ADSGoogle Scholar
  187. 187.
    H. Föll, U. Gösele, B.O. Kolbesen, J. Cryst. Growth 52, 907 (1981)Google Scholar
  188. 188.
    R. Falster, V.V. Voronkov, F. Quast, Phys. Status Solidi B 222, 219 (2000)ADSGoogle Scholar
  189. 189.
    T. Sinno, E. Dornberger, W. von Ammon, R.A. Brown, F. Dupret, Mater. Sci. Eng. R 28, 149 (2000)Google Scholar
  190. 190.
    S. Lee, G.S. Hwang, Phys. Rev. B 78, 045204 (2008)ADSGoogle Scholar
  191. 191.
    A. Claverie, B. Colombeau, B.D. Mauduit, C. Bonafos, X. Hebras, G.B. Assayag, F. Cristiano, Appl. Phys. A 76, 1025 (2003)ADSGoogle Scholar
  192. 192.
    P. Pichler, Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Springer, Wien, 2004)Google Scholar
  193. 193.
    G.D. Watkins, J.W. Corbett, Phys. Rev. 134, A1359 (1964)ADSGoogle Scholar
  194. 194.
    J.P. Goss, P. Briddon, R. Jones, J. Phys.: Condens. Matter 16, 3311 (2004)ADSGoogle Scholar
  195. 195.
    S. Dannefaer, P. Mascher, D. Kerr, Phys. Rev. Lett. 56, 2195 (1986)ADSGoogle Scholar
  196. 196.
    H. Bracht, N.A. Stolwijk, H. Mehrer, Phys. Rev. B 52, 16542 (1995)ADSGoogle Scholar
  197. 197.
    M.I.J. Probert, M.C. Payne, Phys. Rev. B 67, 075204 (2003)ADSGoogle Scholar
  198. 198.
    J. Lento, R.M. Nieminen, J. Phys.: Condens. Matter 15, 4387 (2003)ADSGoogle Scholar
  199. 199.
    E. Domberger, D. Temmler, W. von Ammon, J. Electrochem. Soc. 149, G226 (2002)Google Scholar
  200. 200.
    R. Winkler, G. Behnke, Semiconductor Silicon (The Electrochemical Society, Pennington, NJ, 1994), Vol. 94Google Scholar
  201. 201.
    E.G. Roth, O.W. Holland, J.L. Duggan, in Proceedings of Application of Accelerators in Research and Industry, Pts 1 and 2 (1999), Vol. 475, p. 804ADSGoogle Scholar
  202. 202.
    J. Xu, E.G. Roth, O.W. Holland, A.P. Mills, R. Suzuki, Appl. Phys. Lett. 74, 997 (1999)ADSGoogle Scholar
  203. 203.
    A.J. Smith, N.E.B. Cowern, R. Gwilliam, B.J. Sealy, B. Colombeau, E.J.H. Collart, S. Gennaro, D. Giubertoni, M. Bersani, M. Barozzi, Appl. Phys. Lett. 88, 082112 (2006)ADSGoogle Scholar
  204. 204.
    E. Bruno, S. Mirabella, F. Priolo, E. Napolitani, C. Bongiorno, V. Raineri, J. Appl. Phys. 101, 023515 (2007)ADSGoogle Scholar
  205. 205.
    M. Itsumi, H. Akiya, T. Ueki, M. Tomita, M. Yamawaki, J. Appl. Phys. 78, 5984 (1995)ADSGoogle Scholar
  206. 206.
    D.J. Eaglesham, A.E. White, L.C. Feldman, D.C. Jacobson, Phys. Rev. Lett. 70, 1643 (1993)ADSGoogle Scholar
  207. 207.
    A. Bongiorno, L. Colombo, T.D.D. la Rubia, Europhys. Lett. 43, 695 (1998)ADSGoogle Scholar
  208. 208.
    M. Prasad, T. Sinno, Phys. Rev. B 68, 045206 (2003)ADSGoogle Scholar
  209. 209.
    S. Lee, G.S. Hwang, Phys. Rev. B 78, 125310 (2008)ADSGoogle Scholar
  210. 210.
    T.E.M. Staab, A. Sieck, M. Haugk, M. Puska, T. Frauenheim, H. Leipner, Phys. Rev. B 65, 115210 (2002)ADSGoogle Scholar
  211. 211.
    J.L. Hastings, S.K. Estreicher, P. Fedders, Phys. Rev. B 56, 10215 (1997)ADSGoogle Scholar
  212. 212.
    V.C. Venezia, L. Pelaz, H.J.L. Gossmann, T.H. haynes, C.S. Rafferty, Phys. Rev. Lett. 79, 1273 (2001)Google Scholar
  213. 213.
    R. Kalyanaraman, T.E. Haynes, O.W. Holland, H.J.L. Gossmann, C.S. Rafferty, G.H. Gilmer, Appl. Phys. Lett. 79, 1983 (2001)ADSGoogle Scholar
  214. 214.
    S. Takeda, M. Kohyama, K. Ibe, Philos. Mag. A 70, 287 (1994)ADSGoogle Scholar
  215. 215.
    A.E. Michel, W. Rausch, P.A. Ronsheim, R.H. Kastl, Appl. Phys. Lett. 50, 416 (1987)ADSGoogle Scholar
  216. 216.
    R. Car, P.J. Kelly, A. Oshiyama, S.T. Pantelides, Phys. Rev. Lett. 52, 1814 (1984)ADSGoogle Scholar
  217. 217.
    R. Car, P. Blöchl, E. Smargiassi, Mater. Sci. Forum 83–87, 433 (1992)Google Scholar
  218. 218.
    J. Zhu, L.H. Yang, C. Mailhiot, T.D. de la Rubia, G.H. Gilmer, Nucl. Instrum. Methods Phys. Res. B 102, 29 (1995)ADSGoogle Scholar
  219. 219.
    W.K. Leung, R.J. Needs, G. Rajagopal, S. Itoh, S. Ihara, Phys. Rev. Lett. 83, 2351 (1999)ADSGoogle Scholar
  220. 220.
    R.J. Needs, J. Phys.: Condens. Matter 11, 10437 (1999)ADSGoogle Scholar
  221. 221.
    T.J. Lenosky, J.D. Kress, I. Kwon, A.F. Voter, B. Edwards, D.F. Richards, S. Yang, J.B. Adams, Phys. Rev. B 55, 1528 (1997)ADSGoogle Scholar
  222. 222.
    I.P. Batra, F.F. Abraham, S. Ciraci, Phys. Rev. B 35, 9552 (1987)ADSGoogle Scholar
  223. 223.
    H.R. Schober, Phys. Rev. B 39, 13013 (1989)ADSGoogle Scholar
  224. 224.
    D. Maroudas, R.A. Brown, Appl. Phys. Lett. 62, 172 (1993)ADSGoogle Scholar
  225. 225.
    D. Maroudas, R.A. Brown, Phys. Rev. B 47, 15562 (1993)ADSGoogle Scholar
  226. 226.
    D. Maroudas, S.T. Pantelides, Chem. Eng. Sci. 49, 3001 (1994)Google Scholar
  227. 227.
    G.H. Gilmer, T.D. de la Rubia, D.M. Stock, M. Jaraiz, Nucl. Instrum. Methods Phys. Res. B 102, 247 (1995)ADSGoogle Scholar
  228. 228.
    T. Sinno, K. Jiang, R.A. Brown, Appl. Phys. Lett. 68, 3028 (1996)ADSGoogle Scholar
  229. 229.
    M. Nastar, V.V. Bulatov, S. Yip, Phys. Rev. B 53, 13521 (1996)ADSGoogle Scholar
  230. 230.
    M. Hane, T. Ikezawa, A. Furukawa, IEICE Trans. Electron. E83-C, 1247 (2000)Google Scholar
  231. 231.
    L. Colombo, Physica B 273–274, 458 (1999)Google Scholar
  232. 232.
    M.P. Chichkine, M.M.D. Souza, E.M.S. Narayanan, Phys. Rev. Lett. 88, 085501 (2002)ADSGoogle Scholar
  233. 233.
    I. Martín-Bragado, M. Jaraiz, P. Castrillo, R. Pinacho, J. Barbolla, M.M.D. Souza, Phys. Rev. B 68, 195204 (2003)ADSGoogle Scholar
  234. 234.
    J.P. Goss, P. Briddon, T.A.G. Eberlein, R. Jones, N. Pinho, A. Blumenau, S. Öberg, Appl. Phys. Lett. 85, 4633 (2004)ADSGoogle Scholar
  235. 235.
    W.L. Ng, M.A. Lourenco, R.M. Gwilliam, S. Ledain, G. Shao, K.P. Homewood, Nature 410, 192 (2001)ADSGoogle Scholar
  236. 236.
    N. Arai, S. Takeda, M. Kohyama, Phys. Rev. Lett. 78, 4265 (1997)ADSGoogle Scholar
  237. 237.
    S. Takeda, Jap. J. Appl. Phys. 30, L639 (1991)ADSGoogle Scholar
  238. 238.
    F. Cristiano, N. Cherkashin, X. Hebras, P. Calvo, Y. Lamrani, E. Scheid, B. de Mauduit, B. Colombeau, W. Lerch, S. Paul et al., Nucl. Instrum. Methods Phys. Res. B 216, 46 (2004)ADSGoogle Scholar
  239. 239.
    M. Kohyama, S. Takeda, Phys. Rev. B 46, 12305 (1992)ADSGoogle Scholar
  240. 240.
    J.P. Goss, T.A.G. Eberlein, R. Jones, N. Pinho, A. Blumenau, T. Frauenheim, P. Briddon, S. Öberg, J. Phys. Condens. Mat. 14, 12843 (2002)ADSGoogle Scholar
  241. 241.
    J. Li, K. Jones, Appl. Phys. Lett. 73, 3648 (1998)Google Scholar
  242. 242.
    H. Park, J.W. Wilkins, Phys. Rev. B 79, 241203 (2009)ADSGoogle Scholar
  243. 243.
    S.K. Estreicher, M. Gharaibeh, P.A. Fedders, P. Ordejón, Phys. Rev. Lett. 86, 1247 (2001)ADSGoogle Scholar
  244. 244.
    G. Hobler, C.S. Rafferty, in Materials Research Society Symposium Proceedings, edited by H.J.L. Gossmann, T.E. Haynes, M.E. Law, A.N. Larsen, S. Odanaka (1999)Google Scholar
  245. 245.
    F. Cristiano, J. Grisolia, B. Colombeau, M. Omri, B. de Mauduit, A. Claverie, F.L. Giles, J. Appl. Phys. 87, 8420 (2000)ADSGoogle Scholar
  246. 246.
    C. Zechner, N. Zographos, D. Matveev, A. Erlebach, Mater. Sci. Eng. B 124–125, 401 (2005)Google Scholar
  247. 247.
    N. Zographos, C. Zechner, I. Avci, Mater. Res. Soc. Symp. Proc. 994, 0994 (2007)Google Scholar
  248. 248.
    A.H. Gencer, S.T. Dunham, J. Appl. Phys. 81, 631 (1997)ADSGoogle Scholar
  249. 249.
    D. Stiebel, P. Pichler, N.E.B. Cowern, Appl. Phys. Lett. 79, 2654 (2001)ADSGoogle Scholar
  250. 250.
    A.H. Gencer, S.T. Dunham, J. Appl. Phys. 91, 2883 (2002)ADSGoogle Scholar
  251. 251.
    E. Lampin, V. Senez, A. Claverie, Mater. Sci. Eng. B 71, 155 (2000)Google Scholar
  252. 252.
    M.D. Giles, J. Electrochem. Soc. 138, 1160 (1991)Google Scholar
  253. 253.
    G. Hobler, V. Moroz, in Proceedings of the 30th European Solid-State Device Research Conference (ESSDERC), edited by W.A. Lane, G.M. Crean, F.A. McCabe, H. Grünbacher (2000)Google Scholar
  254. 254.
    L. Pelaz, L.A. Marqués, M. Aboy, J. Barbolla, G.H. Gilmer, Appl. Phys. Lett. 82, 2038 (2003)ADSGoogle Scholar
  255. 255.
    L. Pelaz, G.H. Gilmer, M. Jaraiz, S.B. Herner, H.J. Gossmann, D.J. Eaglesham, G. Hobler, C.S. Rafferty, J. Barbolla, Appl. Phys. Lett. 73, 1421 (1998)ADSGoogle Scholar
  256. 256.
    L. Pelaz, G.H. Gilmer, V.C. Venezia, H.J. Gossmann, M. Jaraiz, J. Barbolla, Appl. Phys. Lett. 74, 2017 (1999)ADSGoogle Scholar
  257. 257.
    G. Hobler, L. Pelaz, C.S. Rafferty, J. Electrochem. Soc. 147, 3494 (2000)Google Scholar
  258. 258.
    I. Martín-Bragado, M. Jaraiz, P. Castrillo, R. Pinacho, J.E. Rubio, J. Barbolla, Appl. Phys. Lett. 84, 4962 (2004)ADSGoogle Scholar
  259. 259.
    L. Pelaz, M. Aboy, P. López, L.A. Marqués, J. Vac. Sci. Technol. B 24, 2432 (2006)Google Scholar
  260. 260.
    M. Aboy, L. Pelaz, L.A. Marqués, L. Enríquez, J. Barbolla, J. Appl. Phys. 94, 1013 (2003)ADSGoogle Scholar
  261. 261.
    A. Claverie, F. Cristiano, B. Colombeau, E. Scheid, B.D. Mauduit, in Proceedings of the 14th International Conference on Ion Implantation (2002)Google Scholar
  262. 262.
    C.J. Ortiz, T. Fuhner, P. Pichler, F. Cristiano, B. Colombeau, N.E.B. Cowern, A. Claverie, J. Appl. Phys. 96, 4866 (2004)ADSGoogle Scholar
  263. 263.
    C.S. Rafferty, G.H. Gilmer, M. Jaraiz, D.J. Eaglesham, H.J. Gossman, Appl. Phys. Lett. 68, 2395 (1996)ADSGoogle Scholar
  264. 264.
    P. Castrillo, I. Martín-Bragado, R. Pinacho, J.E. Rubio, K.R.C. Mok, F.J. Miguel-Herrero, J. Barbolla, Mater. Sci. Eng. B 124–125, 404 (2005)Google Scholar
  265. 265.
    I. Avci,M.E. Law, E. Kuryliw, A.F. Saavedra, K.S. Jones, J. Appl. Phys. 95, 2452 (2004)ADSGoogle Scholar
  266. 266.
    E. Landi, A. Armigliato, S. Solmi, R. Köghler, E. Wieser, Appl. Phys. A 47, 359 (1998)ADSGoogle Scholar
  267. 267.
    D. Takeuchi, H. Shimada, J. Matsuo, I. Yamada, Nucl. Instrum. Methods Phys. Res. B 121, 345 (1997)ADSGoogle Scholar
  268. 268.
    Y. Kawasaki, T. Kuroi, T. Yamashita, K. Horita, T. Hayashi, M. Ishibashi, M. Togawa, Y. Ohno, M. Yoneda, T. Horsky et al., Nucl. Instrum. Methods Phys. Res. B 237, 25 (2005)ADSGoogle Scholar
  269. 269.
    G. Hobler, G. Otto, Mat. Sci. Semicond. Process. 6, 1 (2003)Google Scholar
  270. 270.
    G. Holmen, J. Linnros, B. Svensson, Appl. Phys. Lett. 45, 1116 (1984)ADSGoogle Scholar
  271. 271.
    J. Linnros, B. Svensson, G. Holmen, Phys. Rev. B 30, 3629 (1984)ADSGoogle Scholar
  272. 272.
    D.A. Thompson, A. Golanski, H. Haugen, L.M. Howe, J.A. Davies, Radiat. Eff. 50, 125 (1980)Google Scholar
  273. 273.
    R.G. Elliman, J. Linnros, W.L. Brown, Mater. Res. Soc. Symp. Proc. 100, 363 (1988)Google Scholar
  274. 274.
    J. Linnros, R.G. Elliman, W.L. Brown, J. Mater. Res. 3, 1208 (1988)ADSGoogle Scholar
  275. 275.
    D.N. Seidman, R.S. Averback, P.R. Okamoto, A.C. Baily, Phys. Rev. Lett. 58, 900 (1987)ADSGoogle Scholar
  276. 276.
    S. Takeda, J. Yamasaki, Phys. Rev. Lett. 83, 320 (1999)ADSGoogle Scholar
  277. 277.
    S. Takeda, J. Yamasaki, Y. Kimura, Physica B 273–274, 476 (1999)Google Scholar
  278. 278.
    T. Motooka, Phys. Rev. B 49, 16367 (1994)ADSGoogle Scholar
  279. 279.
    K.A. Jackson, J. Mater. Res. 3, 1218 (1988)ADSGoogle Scholar
  280. 280.
    J.S. Williams, R.G. Elliman, Phys. Rev. Lett. 51, 1069 (1983)ADSGoogle Scholar
  281. 281.
    F. Priolo, E. Rimini, Mater. Sci. Rep. 5, 319 (1990)Google Scholar
  282. 282.
    D.M. Stock, B. Weber, K. Gärtner, Phys. Rev. B 61, 8150 (2000)ADSGoogle Scholar
  283. 283.
    S. Goedecker, T. Deutsch, L. Billard, Phys. Rev. Lett. 88, 235501 (2002)ADSGoogle Scholar
  284. 284.
    L.A. Marqués, L. Pelaz, J. Hernández, J. Barbolla, G.H. Gilmer, Phys. Rev. B 64, 45214 (2001)ADSGoogle Scholar
  285. 285.
    B. Weber, D.M. Stock, K. Gärtner, Mater. Sci. Eng. B 71, 213 (2000)Google Scholar
  286. 286.
    L.A. Marqués, L. Pelaz, M. Aboy, L. Enríquez, J. Barbolla, Phys. Rev. Lett. 91, 135504 (2003)ADSGoogle Scholar
  287. 287.
    G.L. Olson, J.A. Roth, Mater. Sci. Reports 3, 1 (1988)Google Scholar
  288. 288.
    L. Pelaz, L.A. Marqués, M. Aboy, J. Barbolla, Defect and Diffusion Forum 221, 31 (2003)Google Scholar
  289. 289.
    P. López, L. Pelaz, L.A. Marqués, I. Santos, J. Appl. Phys. 101, 093518 (2007)ADSGoogle Scholar
  290. 290.
    Y. Masaki, P.G. LeComber, A.G. Fitzgerald, J. Appl. Phys. 74, 129 (1993)ADSGoogle Scholar
  291. 291.
    R.D. Goldberg, J.S. Williams, R.G. Elliman, Nucl. Instrum. Methods Phys. Res. B 106, 242 (1995)ADSGoogle Scholar
  292. 292.
    G.L. Olson, J.A. Roth, Handbook of crystal growth 3, 255 (1994)Google Scholar
  293. 293.
    A. Battaglia, F. Priolo, E. Rimini, Nucl. Instrum. Methods Phys. Res. B 59, 382 (1991)ADSGoogle Scholar
  294. 294.
    A. Battaglia, S.U. Campisano, J. Appl. Phys. 74, 6058 (1993)ADSGoogle Scholar
  295. 295.
    R.D. Goldberg, R.G. Elliman, J.S. Williams, Nucl. Instrum. Methods Phys. Res. B 80/81, 596 (1993)ADSGoogle Scholar
  296. 296.
    J.S. Williams, Mater. Res. Soc. Symp. Proc. 51, 83 (1985)Google Scholar
  297. 297.
    E.C. Baranova, V.M. Gusev, Y.V. Martynenko, C.V. Starinin, I.B. Haibullin, Radiat. Eff. 18, 21 (1973)Google Scholar
  298. 298.
    P. López, L. Pelaz, L.A. Marqués, I. Santos, M. Aboy, J. Barbolla, Mater. Sci. Eng. B 114, 82 (2004)Google Scholar
  299. 299.
    J.E. Rubio, M. Jaraiz, I. Martín-Bragado, R. Pinacho, P. Castrillo, J. Barbolla, Mater. Sci. Eng. B 114, 151 (2004)Google Scholar
  300. 300.
    K.R.C. Mok, F. Benistant, M. Jaraiz, J.E. Rubio, P. Castrillo, R. Pinacho, M.P. Srinivasan, J. Appl. Phys. 103, 014911 (2008)ADSGoogle Scholar
  301. 301.
    J.R. Dennis, E.B. Hale, J. Appl. Phys. 49, 1119 (1978)ADSGoogle Scholar
  302. 302.
    F.L. Vook, in Radiation Damage and Defects in Semiconductors, edited by J.E. Whitehouse (London, 1973), Inst. Phys. Conf. Ser. No. 16, p. 60Google Scholar
  303. 303.
    H.J. Stein, Radiat. Eff. 6, 19 (1970)Google Scholar
  304. 304.
    S.T. Picraux, W. Weisenberger, F.L. Vook, Radiat. Eff. 7, 101 (1971)Google Scholar
  305. 305.
    S.T. Picraux, F.L. Vook, Radiat. Eff. 11, 179 (1971)Google Scholar
  306. 306.
    H. Cerva, G. Hobler, J. Electrochem. Soc. 139, 3631 (1992)Google Scholar
  307. 307.
    I. Avci, M.E. Law, E. Kuryliw, K.S. Jones, IEDM Technical Digest (2001), p. 835Google Scholar
  308. 308.
    S. Morarka, N.G. Rudawski, M.E. Law, K.S. Jones, R.G. Elliman, J. Appl. Phys. 105, 053701 (2009)ADSGoogle Scholar
  309. 309.
    L. Csepregi, E.F. Kennedy, J.W. Mayer, T.W. Sigmon, J. Appl. Phys. 49, 3906 (1978)ADSGoogle Scholar
  310. 310.
    B. Drosd, J. Washburn, J. Appl. Phys. 51, 4106 (1980)ADSGoogle Scholar
  311. 311.
    A. Armigliato, D. Nobili, P. Ostoja, M. Servidori, S. Solmi (1977)Google Scholar
  312. 312.
    T. Yoshikawa, K. Morita, J. Electrochem. Soc. 150, G465 (2003)Google Scholar
  313. 313.
    S. Haridoss, A.R.F. Bénière, M. Gauneau, J. Appl. Phys. 51, 5833 (1980)ADSGoogle Scholar
  314. 314.
    S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, V. Soncini, G. Carnevale, A. Benvenuti, A. Marmiroli, J. Appl. Phys. 92, 1361 (2002)ADSGoogle Scholar
  315. 315.
    S. Solmi, A. Parisini, R. Angelucci, A. Armigliato, D. Nobili, L. Moro, Phys. Rev. B 53, 7836 (1996)ADSGoogle Scholar
  316. 316.
    D. Nobili, S. Solmi, A. Parisini, M. Derdour, A. Armigliato, L. Moro, Phys. Rev. B 49, 2477 (1994)ADSGoogle Scholar
  317. 317.
    D. Nobili, R. Angelucci, A. Armigliato, E. Landi, S. Solmi, J. Electrochem. Soc. 136, 1142 (1989)Google Scholar
  318. 318.
    S.M. Hu, Mater. Sci. Eng. R 13, 105 (1994)Google Scholar
  319. 319.
    H. Bracht, MRS Bulletin on Defects and Diffusion in Silicon Technology 25, 22 (2000)Google Scholar
  320. 320.
    K.C. Pandey, Phys. Rev. Lett. 57, 2287 (1986)ADSGoogle Scholar
  321. 321.
    H.J. Gossmann, T.E. Haynes, P.A. Stolk, D.C. Jacobson, G.H. Gilmer, J.M. Poate, H.S. Luftman, T.K. Mogi, M.O. Thompson, Appl. Phys. Lett. 71, 3862 (1997)ADSGoogle Scholar
  322. 322.
    I. Martin-Bragado, P. Castrillo, M. Jaraiz, R. Pinacho, J.E. Rubio, J. Barbolla, Phys. Rev. B 72, 35202 (2005)ADSGoogle Scholar
  323. 323.
    I. Martin-Bragado, P. Castrillo, M. Jaraiz, R. Pinacho, J.E. Rubio, J. Barbolla, V. Moroz, J. Appl. Phys. 98, 053709 (2005)ADSGoogle Scholar
  324. 324.
    P. Alippi, L. Colombo, P. Ruggerone, A. Sieck, G. Seifert, T. Frauenheim, Phys. Rev. B 64, 075207 (2001)ADSGoogle Scholar
  325. 325.
    A. Ural, P.B. Griffin, J.D. Plummer, J. Appl. Phys. 85, 6440 (1999)ADSGoogle Scholar
  326. 326.
    N.E.B. Cowern, K.T.F. Janssen, G.F.A. van de Walle, D.J. Gravesteijn, Phys. Rev. Lett. 65, 2434 (1990)ADSGoogle Scholar
  327. 327.
    D. De Salvador, E. Napolitani, S. Mirabella, G. Bisognin, G. Impellizzeri, A. Carnera, F. Priolo, Phys. Rev. Lett. 97, 255902 (2006)ADSGoogle Scholar
  328. 328.
    S. Matsumoto, Y. Ishikawa, T. Niimi, J. Appl. Phys. 54, 5049 (1983)ADSGoogle Scholar
  329. 329.
    D. Mathiot, J.C. Pfister, J. Appl. Phys. 55, 3518 (1984)ADSGoogle Scholar
  330. 330.
    N.E.B. Cowern, J. Appl. Phys. 64, 4484 (1988)ADSGoogle Scholar
  331. 331.
    P. Novell, M.E. Law, in Proc. of the NUPAD IV (IEEE, New York, 1992), pp. 41–44Google Scholar
  332. 332.
    S. Whelan, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, A.L. Magna, J. Appl. Phys. 94, 3873 (2001)ADSGoogle Scholar
  333. 333.
    S.A. Harrison, Ph.D. Thesis: First Principles Modeling of Arsenic and Fluorine Behavior in Crystalline Silicon during Ultrashallow Junction Formation (University of Texas at Austin, 2006)Google Scholar
  334. 334.
    O. Sugino, A. Oshiyama, Phys. Rev. B 46, 12335 (1992)ADSGoogle Scholar
  335. 335.
    E.L. Elkin, G.D. Watkins, Phys. Rev. 174, 881 (1968)ADSGoogle Scholar
  336. 336.
    M. Hirata, M. Hirata, H. Saito, J. Phys. Soc. Jpn 27, 405 (1969)ADSGoogle Scholar
  337. 337.
    B. Baccus, T. Wada, N. Shigyo, M. Norishima, H. Nakajima, K. Inou, T. Iinuma, H. Iwai, IEEE Trans. Elec. Dev. 39, 648 (1992)ADSGoogle Scholar
  338. 338.
    M. Hane, T. Ikezawa, M. Hiroi, H. Matsumoto, in IEEE International Electron Devices Meeting (1996), pp. 803–806Google Scholar
  339. 339.
    R. Pinacho, M. Jaraiz, P. Castrillo, I. Martin-Bragado, J.E. Rubio, J. Barbolla, Appl. Phys. Lett. 86, 252103 (2005)ADSGoogle Scholar
  340. 340.
    S.A. Harrison, T.F. Edgar, G.S. Hwang, Appl. Phys. Lett. 87, 231905 (2005)ADSGoogle Scholar
  341. 341.
    R. Kim, T. Hirose, T. Shano, H. Tsuji, K. Taniguchi, Jpn J. Appl. Phys. 41, 227 (2002)ADSGoogle Scholar
  342. 342.
    A. Nylandsted Larsen, K. Kyllesbech Larsen, P.E. Andersen, B.G. Svensson, J. Appl. Phys. 73, 691 (1993)ADSGoogle Scholar
  343. 343.
    A. Nylandsted Larsen, S.Y. Shiryaev, E.S. Sorensen, P. Tidemand-Petersson, Appl. Phys. Lett. 48, 1805 (1986)ADSGoogle Scholar
  344. 344.
    D. Mathiot, J.C. Pfister, Appl. Phys. Lett. 42, 1043 (1983)ADSGoogle Scholar
  345. 345.
    R.O. Schwenker, E.S. Pan, R.F. Lever, J. Appl. Phys. 42, 3195 (1971)ADSGoogle Scholar
  346. 346.
    W.K. Chu, Appl. Phys. Lett. 36, 273 (1980)ADSGoogle Scholar
  347. 347.
    H.J. Gossmann, G.H. Gilmer, C.S. Rafferty, F.C. Unterwald, T. Boone, J.M. Poate, H.S. Luftman, W. Frank, J. Appl. Phys. 77, 1948 (1995)ADSGoogle Scholar
  348. 348.
    M. Aboy, L. Pelaz, L.A. Marqués, P. López, J. Barbolla, J. Appl. Phys. 97, 103520 (2005)ADSGoogle Scholar
  349. 349.
    P. Alippi, P. Ruggerone, L. Colombo, Phys. Rev. B 69, 125205 (2004)ADSGoogle Scholar
  350. 350.
    M. Aboy, L. Pelaz, L.A. Marqués, J. Barbolla, A. Mokhberi, Y. Takamura, P.B. Griffin, J.D. Plummer, Appl. Phys. Lett. 83, 4166 (2003)ADSGoogle Scholar
  351. 351.
    S. Boninelli, S. Mirabella, E. Bruno, F. Priolo, F. Cristiano, A. Claverie, D. De Salvador, G. Bisognin, E. Napolitani, Appl. Phys. Lett. 91, 031905 (2007)ADSGoogle Scholar
  352. 352.
    D. De Salvador, E. Napolitani, G. Bisognin, A. Carnera, E. Bruno, S. Mirabella, G. Impellizzeri, F. Priolo, Appl. Phys. Lett. 87, 221902 (2005)ADSGoogle Scholar
  353. 353.
    M. Aboy, L. Pelaz, P. López, E. Bruno, S. Mirabella, E. Napolitani, Mater. Sci. Eng. B 144–145, 247 (2008)Google Scholar
  354. 354.
    S. Mirabella, E. Bruno, F. Priolo, D. De Salvador, E. Napolitani, A.V. Drigo, A. Carnera, Appl. Phys. Lett. 83, 680 (2003)ADSGoogle Scholar
  355. 355.
    V.C. Venezia, R. Duffy, L. Pelaz, M. Aboy, A. Heringa, P.B. Griffin, C.C. Wang, M.J.P. Hopstaken, Y. Tamminga, T. Dao et al., in IEEE International Electron Devices Meeting (2003), pp. 20.3.1–4Google Scholar
  356. 356.
    A. Mattoni, L. Colombo, Phys. Rev. B 69, 45204 (2004)ADSGoogle Scholar
  357. 357.
    A.D. Lilak, S.K. Earles, K.S. Jones, M.E. Law, in IEEE International Electron Devices Meeting (1996), pp. 493–496Google Scholar
  358. 358.
    J. Schermer, A. Martinez-Limia, P. Pichler, C. Zechner, W. Lerch, S. Paul, Solid State Electronics 52, 1424 (2008)ADSGoogle Scholar
  359. 359.
    P.M. Rousseau, P.B. Griffin, W.T. Fang, J.D. Plummer, J. Appl. Phys. 84, 3593 (1998)ADSGoogle Scholar
  360. 360.
    R.C. Pandey, A. Erbil, G.S. Cargill, R.F. Boehme, D. Vanderbilt, Phys. Rev. Lett. 61, 1282 (1988)ADSGoogle Scholar
  361. 361.
    V. Ranki, J. Nissilä, K. Saarinen, Phys. Rev. Lett. 88, 105506 (2002)ADSGoogle Scholar
  362. 362.
    J. Xie, S. Chen, Phys. Rev. Lett. 83, 1795 (1999)ADSGoogle Scholar
  363. 363.
    D.C. Mueller, E. Alonso, W. Fichtner, Phys. Rev. B 68, 045208 (2003)ADSGoogle Scholar
  364. 364.
    R. Brindos, P. Keys, K. Jones, M. Law, Appl. Phys. Lett. 75, 229 (1999)ADSGoogle Scholar
  365. 365.
    S.A. Harrison, T.F. Edgar, G.S. Hwang, Electrochemical and Solid-State Letters 9, G354 (2006)Google Scholar
  366. 366.
    A. Martinez-Limia, P. Pichler, W. Lerch, S. Paul, H. Kheyrandish, A. Pakfar, C. Tavernier, Mater. Sci. Eng. B 154–155, 211 (2008)Google Scholar
  367. 367.
    K.S. Jones, D.K. Sadana, S. Prussin, J. Washburn, E.R. Weber, W.J. Hamilton, J. Appl. Phys. 63, 1414 (1988)ADSGoogle Scholar
  368. 368.
    R. Duffy, V.C. Venezia, A. Heringa, T.W.T. Hüsken, M.J.P. Hopstaken, N.E.B. Cowern, P.B. Griffin, C.C. Wang, Appl. Phys. Lett. 82, 3647 (2003)ADSGoogle Scholar
  369. 369.
    L. Pelaz, M. Aboy, P. López, L.A. Marqués, I. Santos, Nucl. Instrum. Methods Phys. Res. B 253, 41 (2006)ADSGoogle Scholar
  370. 370.
    A. Mokhberi, P.B. Griffin, J.D. Plummer, E. Paton, S. McCoy, K. Elliot, IEEE Trans. Elec. Dev. 49, 1183 (2002)ADSGoogle Scholar
  371. 371.
    M. Aboy, L. Pelaz, L.A. Marqués, P. López, J. Barbolla, R. Duffy, V.C. Venezia, P.B. Griffin, Appl. Phys. Lett. 86, 031908 (2005)ADSGoogle Scholar
  372. 372.
    S. Severi, K. Henson, R. Lindsay, A. Lauwers, B.J. Pawlak, R. Surdeanu, K.D. Meyer, Mat. Res. Soc. Symp. Proc. 810, 455 (2004)Google Scholar
  373. 373.
    R. Duffy, M. Aboy, V.C. Venezia, S. Severi, B.J. Pawlak, P. Eyben, F. Roozeboom, L. Pelaz, IEEE Trans. Elec. Dev. 53, 71 (2006)ADSGoogle Scholar
  374. 374.
    M. van Dal, N. Collaert, G. Doornbos, G. Vellianitis, G. Curatola, B. Pawlak, R. Duffy, C. Jonville, B. Degroote, E. Altamirano et al., in Symp. VLSI Tech. Dig. (2007), pp. 110–111Google Scholar
  375. 375.
    H.J. Gossmann, A. Agarwal, T. Parrill, L.M. Rubin, J.M. Poate, IEEE Trans. Nanotechnology 2, 285 (2003)ADSGoogle Scholar
  376. 376.
    W. Vandervorst, J. Everaert, E. Rosseel, M. Jurczak, T. Hoffman, P. Eyben, J. Mody, G. Zschatzsch, S. Koelling, M. Gilbert et al., Ion Implantation Technology Conf. Proc. 1066, 446 (2008)Google Scholar
  377. 377.
    M. van Dal, R. Duffy, B. Pawlak, N. Collaert, M. Jurczak, R. Lander, Mat. Res. Symp. Proc. 1070, 67 (2008)Google Scholar
  378. 378.
    L. Pelaz et al., accepted for publication in J. Vac. Sci. Technol. BGoogle Scholar
  379. 379.
    R. Duffy, G. Curatola, B. Pawlak, G. Doornbos, K. van der Tak, P. Breimer, J. van Berkum, F. Roozeboom, J. Vac. Sci. Technol. B 26, 402 (2008)Google Scholar
  380. 380.
    R. Duffy, M. van Dal, B. Pawlak, M. Kaiser, R. Weemaes, B. Degroote, E. Lunnen, E. Altamirano, Appl. Phys. Lett. 90, 241912 (2007)ADSGoogle Scholar
  381. 381.
    E. Collart, S. Felch, B. Pawlak, P. Absil, S. Severi, T. Janssens, W. Vandervorst, J. Vac. Sci. Technol. B 24, 507 (2006)Google Scholar
  382. 382.
    K. Suzuki, Y. Kataoka, S. Nagayamaa, C.W. Magee, T.H. Buyuklimanli, T. Nagayama, IEEE Trans. Elec. Dev. 54, 262 (2007)ADSGoogle Scholar
  383. 383.
    N. Zographos, I. Martin-Bragado, in Mat. Res. Soc. Symp. Proc. (2008), Vol. 1070, pp. E03–01Google Scholar
  384. 384.
    S. Jain, P.B. Griffin, J.D. Plummer, S. Mccoy, J. Gelpey, T. Selinger, D.F. Downey, J. Appl. Phys. 96, 7357 (2004)ADSGoogle Scholar
  385. 385.
    R. Duffy, V.C. Venezia, A. Heringa, M.J.P. Hopstaken, G.C.J. Maas, T. Dao, Y. Tamminga, F. Roozeboom, in Mat. Res. Soc. Symp. Proc. (2005), Vol. 810, p. C10.2Google Scholar
  386. 386.
    M.J.P. Hopstaken, Y. Tamminga, M.A. Verheijen, R. Duffy, V.C. Venezia, A. Heringa, Appl. Surf. Phys. 231–232, 688 (2004)Google Scholar
  387. 387.
    J. Dabrowski, H. Müssg, V. Zavodinski, R. Baierle, M.J. Caldas, Phys. Rev. B 65, 245305 (2002)ADSGoogle Scholar
  388. 388.
    C. Steen, A. Martinez-Limia, P. Pichler, H. Ryssel, S. Paul, W. Lerch, L. Pei, G. Duscher, F. Severac, F. Cristiano et al., J. Appl. Phys. 104, 023518 (2008)ADSGoogle Scholar
  389. 389.
    M.S. Daw, W. Windl, N.N. Carlson, M. Laudon, M.P. Masquelier, Phys. Rev. B 64, 045205 (2001)ADSGoogle Scholar
  390. 390.
    M.J. Aziz, Y. Zhao, H.J. Gossmann, S. Mitha, S.P. Smith, D. Schiferl, Phys. Rev. B 73, 054101 (2006)ADSGoogle Scholar
  391. 391.
    I. Martin-Bragado, I. Avci, K.E. Sayed, V. Koltyzhenkov, E. Lyumkis, M.D. Johnson, J. Comput. Electron. 7, 103 (2008)Google Scholar
  392. 392.
    V. Moroz, I. Martin-Bragado, S. Felch, F. Nouri, C. Olsen, K.S. Jones, J. Vac. Sci. Technol. B 26, 439 (2008)Google Scholar

Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  • L. Pelaz
    • 1
  • L. A. Marqués
    • 1
  • M. Aboy
    • 1
  • P. López
    • 1
  • I. Santos
    • 1
  1. 1.Departamento de Electrónica, E.T.S.I. de TelecomunicaciónUniversidad de ValladolidValladolidSpain

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