Abstract.
A simple electronic experiment using a field-effect-transistor–type microstructure is suggested. The thin superconductor layer forms the source-drain channel of a layered structure across which an AC current is applied. It is found necessary to measure the second harmonic of the source-gate voltage, and the third harmonic of the source-drain voltage; these electronic measurements then give the logarithmic derivative of the density of states, which is an important consideration when fitting parameters of the band structure.
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Mishonov, T., Stoev, M. Determination of the density of states in high-Tc thin films using FET-type microstructures. Eur. Phys. J. B 54, 419–421 (2006). https://doi.org/10.1140/epjb/e2007-00022-x
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DOI: https://doi.org/10.1140/epjb/e2007-00022-x