Abstract.
In this paper, we present a theoretical study of the quantized electronic states in Cd1-xZnxS quantum dots. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schrödinger equation. Electrons and holes are assumed to be confined in dots having a flattened cylindrical geometry with a finite barrier height at the boundary. Optical absorption measurements are used to fit the bandgap edge of the Cd1-xZnxS nanocrystals. An analysis of the electron band parameters has been made as a function of Zn composition. Two main features were revealed: (i) a multiplicity in Cd1-xZnxS quantum dots with different crystalline sizes has been found to fit accurately experimental data in the composition range 0 ≤x ≤0.2; (ii) the fit did not, however, show a multiplicity for x higher than 0.4. On the other hand, we have calculated the energy level structure of coupled Cd1-xZnxS semiconductor quantum dots using the tight-binding approximation. As is found the Zn composition x = 0.4 is expected to be the most favorable to give rise a superlattice behavior for the Cd1-xZnxS quantum dots studied.
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Safta, N., Sakly, A., Mejri, H. et al. Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors. Eur. Phys. J. B 53, 35–38 (2006). https://doi.org/10.1140/epjb/e2006-00350-3
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DOI: https://doi.org/10.1140/epjb/e2006-00350-3