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Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junction with amorphous Co-Fe-B electrodes

  • Solid and Condensed State Physics
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Abstract.

Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junctions(DBMTJs) with a structure of [IrMn/CoFe/Ru/CoFeB]/Al-O/CoFeB/Al-O/[CoFeB/Ru/CoFe/IrMn], have been investigated. The DBMTJs show a large tunnel magnetoresistance (TMR) ratio of up to 57.6%, a high V1/2 value of 1.26 V and small switching field Hc of 9.5 Oe at room temperature (RT). The TMR reaches the maximum at 30 K, about 89.0%, and decreases slightly from 30 to 4.2 K. A novel zero-bias anomaly (ZBA) in the P state is found and is temperature dependent, more sharply at low temperature, whereas a normal ZBA exists in the AP state. These effects are ascribed to magnon-, phonon- and impurity-assisted tunneling, and variation of density of states. The DBMTJ with a large TMR ratio, a high V1/2, and small switching field Hc is promising for developing the future spin electronic devices.

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Authors and Affiliations

  1. National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, 100080, P.R. China

    Z. M. Zeng, Y. Wang, X. F. Han & W. S. Zhan

  2. Beijing University of Technology, Beijing, 100022, P.R. China

    Z. Zhang

Authors
  1. Z. M. Zeng
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  2. Y. Wang
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  3. X. F. Han
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  4. W. S. Zhan
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Correspondence to Z. M. Zeng.

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Zeng, Z., Wang, Y., Han, X. et al. Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junction with amorphous Co-Fe-B electrodes. Eur. Phys. J. B 52, 205–208 (2006). https://doi.org/10.1140/epjb/e2006-00291-9

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  • DOI: https://doi.org/10.1140/epjb/e2006-00291-9

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