Abstract.
The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA2(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m2 at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.
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References
E. Schreiber, H.-J. Fitting, J. Elec. Spec. and Rela. Phen. 131, 132, 87 (2003)
Zheng Xu, Chong Qu, Feng Teng, Fujun Zhang, Appl. Phys. Lett. 86, 061911 (2005)
Zheng Xu, Feng Teng, Chong Qu, J. Lumin. 102, 103, 291 (2003)
Xiaohui Yang, Xurong Xu, Appl. Phys. Lett. 77, 7 (2000)
Fujun Zhang, Zheng Xu, Feng Teng, J. Lumi. 117, 90 (2006)
Xu Zheng, Teng Feng, Qu Chong, Zhao Suling, Xu Xurong Physica B 348, 231 (2004)
Fujun Zhang, Zheng Xu, Feng Teng, Ling Liu, Material Science and Engineering B 113, 84 (2005)
Fujun Zhang, Zheng Xu, Suling Zhao, Chinese Physics 15, 526 (2006)
D. Parker, Chem. Soc. Rev. 33, 156 (2004)
N. Sabbatini, M. Guardigli, J.-M. Lehn, Chem. Rev. 123, 201 (1993)
J.-C.G. Bünzli, C. Piguet, Chem. Rev. 102, 1897 (2002)
A.G. Muckl, S. Berleb, W. Brutting, M. Schwoerer, Synthetic Metals 111, 112, 91 (2000)
H.J. Fitting, A. Von Czarnowski, Phys. Stat. Sol. (a) 93, 385 (1986)
D.M. Pai, J. Chem. Phys. 52, 2285 (1997)
Y.N. Gartstein, E.M. Conwell, Chem. Phys. Lett. 255, 93 (1996)
Yujiang Wang, Mouzhi Chen, Zhaohong Liu, Semiconductor Photonics and Technology 7, 138 (2001)
W.D. Gill, J. Appl. Phys. 43, 5033 (1972)
Fujun Zhang, Zheng Xu, Suling Zhao, J. Lumin, (to be published)
C. Adcahi, M.A. Baldo, S.R. Forrest, J. Appl. Phys. 87, 8049 (2000)
M.D. McGehee, T. Bergstedt, C. Zhang, Adv. Mater. 11, 1349 (1999)
Xurong Xu, Lei Gang, Zheng Xu, J. Cryst. Growth 117, 935 (1992)
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Zhang, FJ., Xu, Z., Lv, YG. et al. Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex. Eur. Phys. J. B 52, 245–248 (2006). https://doi.org/10.1140/epjb/e2006-00290-x
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DOI: https://doi.org/10.1140/epjb/e2006-00290-x