Abstract.
Effects of oxygen content on the transport behavior of epitaxial La2/3Sr 1/3MnO\(_{3-\delta}\) films on (110) NdGaO3 and (001) SrTiO3 substrates have been experimentally studied. A quantitative relation between the temperature of metal-to-insulator transition (T p ) and the content of oxygen vacancies is established, and it is found that oxygen non-stoichiometry causes a monotonic decrease of T p . A comparison to crystals La1-x Sr x MnO3 indicates that the reduction of hole concentration due to the incorporation of anionic vacancies dominates the variation of T p , while the vacancies themselves influence the detailed features of the T p -\(\delta \) dependence. Strain in the film affects the effects of oxygen deficiency, and the metal-to-insulator transition disappears at a smaller \(\delta \) value in tensily stressed films. In the temperature region above T p , oxygen vacancies affect the resistive behavior of the films mainly by modulating the content of Mn4 + . In contrast, extra effects due to the scattering of oxygen vacancies become important at low temperatures, causing an exponential increase of resistivity with \(\delta \). A further analysis indicates that oxygen deficiency enhances magnetic scattering, and leads to a resistivity upturn of the form \(-\ln(T)\) when \(\delta \) is significant.
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Received: 8 August 2003, Published online: 24 October 2003
PACS:
75.30.-m Intrinsic properties of magnetically ordered materials - 73.50.-h Electronic transport phenomena in thin films - 68.60.-p Physical properties of thin films, nonelectronic
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Sun, J.R., Yeung, H.W., Wong, H.K. et al. Effects of vacuum annealing on the transport property of La \(\mathsf{_{0.67}}\)Sr \(\mathsf{_{0.33}}\)MnO \(\mathsf{_{3-\delta}}\) films. Eur. Phys. J. B 35, 481–491 (2003). https://doi.org/10.1140/epjb/e2003-00301-6
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DOI: https://doi.org/10.1140/epjb/e2003-00301-6