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Magnetoconductance oscillations in semiconductor-superconductor junctions with a laterally isolating barrier layer inside semiconductor region

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Abstract.

The oscillatory characteristics of magnetoconductance for a junction composed of a superconductor and a semiconductor, in which two parallel quantum wave guides are coupled with each other through a potential barrier layer, are studied systematically. To model the imperfectness of the interface, we introduce a \(\delta-\)function scattering potential barrier lying close to the interface of the junction. The magnetoconductance oscillations (MCO) in this system stem from two sources: one is the interference of wave functions of quasi-particles due to multiple Andreev reflections at the interface; the other is attributed to the variation of the number of the propagation modes when introducing the isolating barrier layer. The introduction of the isolating layer in the quantum wave-guides strongly modifies MCO. We also present a physical picture for the MCO based on a phenomenological argument. The theoretically fitted results are in good agreement with numerical ones.

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Author information

Authors and Affiliations

  1. Department of Electrophysics, National Chiao Tung University, 30050, Hsinchu, Taiwan

    Young-Chung Hsue & Tzong-Jer Yang

  2. Institute of Physics, The Chinese Academy of Sciences, PO Box 603, 100080, Beijing, PR China

    Ben-Yuan Gu

  3. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China

    Jian Wang

Authors
  1. Young-Chung Hsue
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  2. Tzong-Jer Yang
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  3. Ben-Yuan Gu
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  4. Jian Wang
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Corresponding author

Correspondence to Ben-Yuan Gu.

Additional information

Received: 21 March 2003, Published online: 4 August 2003

PACS:

73.40.-c Electronic transport in interface structures - 74.80.Fp Point contact; SN and SNS junctions - 73.21.Hb Quantum wires - 85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

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Hsue, YC., Yang, TJ., Gu, BY. et al. Magnetoconductance oscillations in semiconductor-superconductor junctions with a laterally isolating barrier layer inside semiconductor region. Eur. Phys. J. B 34, 237–246 (2003). https://doi.org/10.1140/epjb/e2003-00217-1

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  • DOI: https://doi.org/10.1140/epjb/e2003-00217-1

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