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Phase transition and random-field induced domain wall response of SrTi O 3

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The European Physical Journal B - Condensed Matter and Complex Systems Aims and scope Submit manuscript

Abstract:

The dielectric permittivity ε′ - i of SrTi 18O 3 (STO18) is studied under a dc electric field E as a function of the temperature, T. In ε′ vs. T, a double-peak is found when 0 < E < 30 KV/m. While the peak at high-T is attributed to the smeared ferroelectric phase transition, the low-T one is induced by domain wall motion. The transverse Ising model including an external homogeneous and quenched random-fields is successfully used to describe both the smeared phase transition and the domain wall response in the low-T domain state. The calculations are in good agreement with the experimental results.

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Authors and Affiliations

  1. Laboratorium für Angewandte Physik, Gerhard Mercator Universität Duisburg, 47048 Duisburg, Germany, , , , , , DE

    L. Zhang, W. Kleemann & J. Dec

  2. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan, , , , , , JP

    R. Wang & M. Itoh

Authors
  1. L. Zhang
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  2. W. Kleemann
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  3. J. Dec
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  4. R. Wang
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  5. M. Itoh
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Additional information

Received 4 January 2002 / Received in final form 25 March 2002 Published online 19 July 2002

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Zhang, L., Kleemann, W., Dec, J. et al. Phase transition and random-field induced domain wall response of SrTi O 3 . Eur. Phys. J. B 28, 163–171 (2002). https://doi.org/10.1140/epjb/e2002-00218-6

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  • DOI: https://doi.org/10.1140/epjb/e2002-00218-6

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