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Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

The European Physical Journal A volume 54, Article number: 34 (2018) Cite this article

Abstract.

A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin (\( \le 100\) nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.

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Authors and Affiliations

  1. Dipartimento di Fisica e Astronomia “G. Galilei”, Università di Padova, Via Marzolo 8, 35121, Padova (PD), Italy

    G. Maggioni, S. Carturan, F. Sgarbossa, V. Boldrini, R. Milazzo, E. Napolitani & D. De Salvador

  2. Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020, Legnaro (PD), Italy

    G. Maggioni, S. Carturan, W. Raniero, F. Sgarbossa, V. Boldrini, D. R. Napoli, D. Scarpa, A. Andrighetto, E. Napolitani & D. De Salvador

  3. INFN, Sezione di Perugia and Dipartimento di Fisica e Geologia, Università di Perugia, Via A. Pascoli, 06123, Perugia, Italy

    S. Riccetto

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  1. G. Maggioni
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  2. S. Carturan
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  3. W. Raniero
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  5. F. Sgarbossa
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Correspondence to G. Maggioni.

Additional information

Communicated by C. Broggini

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Maggioni, G., Carturan, S., Raniero, W. et al. Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors. Eur. Phys. J. A 54, 34 (2018). https://doi.org/10.1140/epja/i2018-12471-0

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  • DOI: https://doi.org/10.1140/epja/i2018-12471-0