The European Physical Journal Special Topics

, Volume 222, Issue 5, pp 1057–1063 | Cite as

Critical behavior of a filling-controlled Mott-transition observed at an organic field-effect-transistor interface

  • H. M. Yamamoto
  • J. Ueno
  • R. Kato
Regular Article Mott Insulators

Abstract

An organic Mott-insulator κ-(BEDT-TTF)2Cu[N(CN)2] Cl(κ-Cl) on SiO2/Si substrate showed an ambipolar field-effect-transistor (FET) characteristics without any hysteresis, which means a continuous Mott-transition at filling-controlled regime (BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene). In order to extract the critical exponent in the vicinity of the Mott-insulating phase, an analysis based on Efros-Shklovskii approximation is performed. The model fitting well reproduces the device characteristics over wide range of temperature and gate voltage. In this analysis, Coulomb gap temperature that characterizes the ground state of doped Mott-insulator shows inversely proportional critical behavior against the doping concentration.

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Copyright information

© EDP Sciences and Springer 2013

Authors and Affiliations

  • H. M. Yamamoto
    • 1
    • 2
    • 3
  • J. Ueno
    • 2
  • R. Kato
    • 2
  1. 1.Institute for Molecular ScienceCIMoSOkazaki, AichiJapan
  2. 2.Advanced Science InstituteRIKENWako, SaitamaJapan
  3. 3.JST-PRESTOKawaguchi, SaitamaJapan

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