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Preparation of heat treated Ni2MnGa thin film without silicon diffusion

  • F. BernardEmail author
  • C. Rousselot
  • L. Hirsinger
  • P. Delobelle
Article

Abstract.

The Ni2MnGa ferromagnetic alloys are one of these smart materials, that show a great interest for micro-electromechanical systems (MEMS) and micro-opto-electromechanical systems (MOEMS) when they are deposited as a thin film by rf sputtering. These films can be sputtered on silicon wafer in order to be easily integrated in Si-based device. Indeed, the use of this kind of substrate is very interesting because of the several well-known micromachining and integration technologies. However only heat treated thin films shows good functional properties that lay the problem of the silicon diffusion, as usually observed in the literature. In this work, a process (rf-sputtering process and annealing treatment) is proposed to elaborate martensite Ni2MnGa thin films on Si substrate without silicon diffusion. This paper presents results on samples annealed at 873 K during 6 h.

Keywords

Martensite European Physical Journal Special Topic Rutherford Backscattering Spectroscopy Shape Memory Material Rutherford Backscattering Spectroscopy Spectrum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008

Authors and Affiliations

  • F. Bernard
    • 1
    Email author
  • C. Rousselot
    • 1
  • L. Hirsinger
    • 2
  • P. Delobelle
    • 2
  1. 1.Institut FEMTO-ST, Pôle Universitaire des Portes du JuraMontbéliard CedexFrance
  2. 2.Institut FEMTO-STBesançonFrance

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