A simple model of the trap-assisted recombination with the excitonic Auger mechanism
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We present a simple model of the trap-assisted recombination combined with the excitonic Auger mechanism. It has been shown that only six independent transitions of electrons and holes should be taken into account to describe a combination of the Shockley–Read–Hall (SRH) recombination with this excitonic process. This is in opposition to a well-known model of the SRH mechanism with the free carriers Auger effect via deep states, where eight separated transitions take place. The derived equation for the effective recombination rate can be useful for modeling the excitonic processes in semiconductors, especially in photovoltaic and optoelectronic devices.
- 6.A.V. Sachenko, A.P. Gorban, V.P. Kostylyov, Semicond. Phys. Quantum Electron. Optoelectron. 3, 5 (2000)Google Scholar