High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

  • Ali Naderi
  • Hamed Mohammadi
Regular Article


In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.


  1. 1.
    M. Pelella, W. Maszara, S. Sundararajan, S. Sinha, A. Wei, D. Ju, W. En, S. Krishnan, D. Chan, S. Chan, P. Yeh, in SOI Conference (IEEE International, 2001)Google Scholar
  2. 2.
    M. Saremi, M. Saremi, H. Niazi, A.Y. Goharrizi, J. Electron. Mater. 46, 5570 (2017)ADSCrossRefGoogle Scholar
  3. 3.
    O. Rejaiba, A.F. Braña, A. Matoussi, Eur. Phys. J. Plus 131, 281 (2016)CrossRefGoogle Scholar
  4. 4.
    J. Ervin, A. Balijepalli, P. Joshi, V. Kushner, J. Yang, T.J. Thornton, IEEE Trans. Electron. Devices 53, 3129 (2006)ADSCrossRefGoogle Scholar
  5. 5.
    A. Aminbeidokhti, A.A. Orouji, S. Rahmaninezhad, M. Ghasemian, IEEE Trans. Electron. Devices 59, 1255 (2012)ADSCrossRefGoogle Scholar
  6. 6.
    M.K. Anvarifard, Superlattices Microstruct. 98, 492 (2016)ADSCrossRefGoogle Scholar
  7. 7.
    Z. Ramezani, A.A. Orouji, H. Agharezaei, J. Comput. Electron. 15, 163 (2016)CrossRefGoogle Scholar
  8. 8.
    A. Naderi, F. Heirani, Int. J. Electron. Commun. 85, 91 (2018)CrossRefGoogle Scholar
  9. 9.
    C.S. Chang, D.Y. Day, Solid-State Electron. 32, 971 (1989)ADSCrossRefGoogle Scholar
  10. 10.
    S.N. Chattopadhyay, P. Pandey, C.B. Overton, S. Krishnamoorthy, J. Semicond. Technol. Sci. 8, 251 (2008)CrossRefGoogle Scholar
  11. 11.
    Z. Ramezani, A.A. Orouji, Mater. Sci. Semicond. Proces. 19, 124 (2014)CrossRefGoogle Scholar
  12. 12.
    A. Naderi, F. Heirani, Superlattices Microstruct. 111, 1022 (2017)ADSCrossRefGoogle Scholar
  13. 13.
    M.K. Anvarifard, Mater. Sci. Semicond. Proces. 15, 60 (2017)CrossRefGoogle Scholar
  14. 14.
    J. Du, W.H. Ko, D.J. Young, Sens. Actuators A, Phys. 112, 116 (2004)CrossRefGoogle Scholar
  15. 15.
    H. Shahnazarisani, A.A. Orouji, M.K. Anvarifard, J. Comput. Electron. 13, 562 (2014)CrossRefGoogle Scholar
  16. 16.
    Device simulator Atlas, Atlas User’s Manual (Silvaco Int. software, Santa Clara, 2015)Google Scholar
  17. 17.
    M. Wolborski, Characterization of dielectric layers for passivation of 4H-SiC devices, PhD dissertation, KTH (2006)Google Scholar
  18. 18.
    J. Singh, Semiconductor Devices: Basic Principles (Wiley, USA, 2001)Google Scholar
  19. 19.
    S.M. Simon, K. Kwok, Physics of Semiconductor Devices (John Wiley & Sons, 2006)Google Scholar

Copyright information

© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Electrical and computer engineering department, Energy FacultyKermanshah University of TechnologyKermanshahIran

Personalised recommendations