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Simulation study of positron production by picosecond laser-driven electrons

  • Yonghong Yan
  • Yuchi Wu
  • Xiaohui Zhang
  • Minghai Yu
  • Tiankui Zhang
  • Bin Zhu
  • Fang Tan
  • Yue Yang
  • Wei Fan
  • Feng Lu
  • Gang Li
  • Weimin Zhou
  • Leifeng Cao
  • Yuqiu GuEmail author
Regular Article
  • 17 Downloads

Abstract

Positron production by picosecond laser-driven electrons has been studied via simulations. The laser parameters were chosen according to a typical 100 J/1 ps laser system, such as the XingGuang III laser. A near-critical density plasma was used to accelerate electrons. Then the positrons were generated by these electrons interacting with a high-Z converter. Particle-in-cell simulations of laser-plasma interaction indicate that the picosecond laser-accelerated electrons have a temperature up to 12 MeV with a beam charge of 800 nC (>5 MeV). The positron generation was simulated by a Monte Carlo toolkit. The simulation results show that with an optimal converter thickness the generated positron beam has a yield of 5 × 1010 that is over one order of magnitude higher than that from direct laser-solid interaction.

Graphical abstract

Keywords

Plasma Physics 

Notes

Author contribution statement

All the authors were involved in the preparation of the manuscript. All the authors have read and approved the final manuscript.

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Copyright information

© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Yonghong Yan
    • 1
  • Yuchi Wu
    • 1
    • 2
  • Xiaohui Zhang
    • 1
  • Minghai Yu
    • 1
  • Tiankui Zhang
    • 1
  • Bin Zhu
    • 1
  • Fang Tan
    • 1
  • Yue Yang
    • 1
  • Wei Fan
    • 1
  • Feng Lu
    • 1
  • Gang Li
    • 1
  • Weimin Zhou
    • 1
  • Leifeng Cao
    • 1
  • Yuqiu Gu
    • 1
    • 2
    Email author
  1. 1.Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering PhysicsMianyangP.R. China
  2. 2.IFSA Collaborative Innovation Center, Shanghai Jiao Tong UniversityShanghaiP.R. China

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