Influence of oxidation on the photonic spectrum of a ternary comb-like silicon photonic crystal: intrinsic modes, reflection windows and intrinsic contrastivity
The optical properties of a ternary A/B/A/C N-periodic structure was investigated analytically and numerically in the framework of transfer matrix formalism. The influence of oxidation on the photonic gaps and positions of reflection windows for the (SiO2/Si/SiO2/air) N structure was calculated, taking into account the transformation of silicon oxide layers widths. It was shown that intrinsic optical contrastivity has a non-monotonic behavior during the oxidation process of silicon for both p-polarisation and s-polarisation of light. The obtained results allow one to determine the optimal oxidation regimes to achieve the required properties of a photonic device.