Formation of fullerene dianions in a Penning trap

  • A. Lassesson
  • N. Walsh
  • F. Martinez
  • A. Herlert
  • G. Marx
  • L. Schweikhard
Electronic and Structural Properties

DOI: 10.1140/epjd/e2005-00122-9

Cite this article as:
Lassesson, A., Walsh, N., Martinez, F. et al. Eur. Phys. J. D (2005) 34: 73. doi:10.1140/epjd/e2005-00122-9

Abstract.

Fullerene dianions in the range C702- to C902- have been created by subjecting trapped fullerene monoanions to low energy electrons in a Penning trap. The dianion production was found to be a function of the trapping-potential depth and the time of interaction between the simultaneously stored monoanions and electrons. Under similar conditions the dianion yield depends on the size of the fullerenes with more than 10% of the trapped C90- ions forming dianions while the corresponding relative yield for C702- was less than 0.1%. The large difference can be explained by the repulsive Coulomb barrier and the second electron affinity of the fullerenes.

Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Authors and Affiliations

  • A. Lassesson
    • 1
  • N. Walsh
    • 1
  • F. Martinez
    • 1
  • A. Herlert
    • 1
  • G. Marx
    • 1
  • L. Schweikhard
    • 1
  1. 1.Institut für Physik, Ernst-Moritz-Arndt-Universität GreifswaldGreifswaldGermany

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