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Towards controllable optical response of GaN quantum dots in alumina

  • C. MaurizioEmail author
  • G. Mattei
  • M.A. Garcia
  • E. Borsella
  • P. Mazzoldi
  • A. Quaranta
  • F. D'Acapito
Original Paper

Abstract.

GaN nanocrystals (in the wurtzite phase) have been synthesized by thermal annealing in reducing atmosphere of Ga++N+ sequentially implanted alumina. We show that the reduction of Ga local concentration (by lowering the implantation dose) yields to an overall increase in the intensity of the GaN photoluminescence signal, to a decrease of the PL bandwidth and to the shift of its onset towards higher energies, due to quantum confinement effects in GaN nanocrystals with a narrow size distribution. The interpretation of the optical results is supported by structural analyses. Moreover, by investigating different forming treatments for GaN synthesis, the key role of hydrogen in the annealing atmosphere is evidenced.

Keywords

Alumina Atmosphere Structural Analysis Optical Response Wurtzite 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin/Heidelberg 2003

Authors and Affiliations

  • C. Maurizio
    • 1
    Email author
  • G. Mattei
    • 1
  • M.A. Garcia
    • 1
  • E. Borsella
    • 1
  • P. Mazzoldi
    • 1
  • A. Quaranta
    • 2
  • F. D'Acapito
    • 3
  1. 1.INFM, Dipartimento di FisicaUniversitá di PadovaPadovaItaly
  2. 2.INFM, Dipartimento di Ingegneria dei MaterialiUniversitá di TrentoPovo, TrentoItaly
  3. 3.INFMGILDA-CRG ESRFGrenobleFrance

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