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Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory

  • Amanda M. D. Corrêa
  • Clóves G. RodriguesEmail author
  • Roberto Luzzi
Regular Article
  • 21 Downloads

Abstract

In this paper we present a study on the charge transport in bulk n-type doped semiconductor 3C-SiC (in both, transient and steady state) using a non-equilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the applied electric field of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.

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Keywords

Solid State and Materials 

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Copyright information

© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Amanda M. D. Corrêa
    • 1
  • Clóves G. Rodrigues
    • 1
    Email author
  • Roberto Luzzi
    • 2
  1. 1.School of Exact Sciences and Computing, Pontifical Catholic University of GoiásGoiâniaBrazil
  2. 2.Condensed Matter Physics Department, Institute of Physics “Gleb Wataghin”, State University of Campinas-UnicampCampinasBrazil

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