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Band gap modulation of graphene on SiC

Abstract

A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.

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Correspondence to Stefan Kolev.

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Kolev, S., Atanasov, V., Aleksandrov, H. et al. Band gap modulation of graphene on SiC. Eur. Phys. J. B 91, 272 (2018). https://doi.org/10.1140/epjb/e2018-90154-1

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Keywords

  • Solid State and Materials