Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands

  • Abhinav Jain
  • Juan-Carlos Rojas-Sanchez
  • Murat Cubukcu
  • Julian Peiro
  • Jean-Christophe Le Breton
  • Céline Vergnaud
  • Emmanuel Augendre
  • Laurent Vila
  • Jean-Philippe  Attané
  • Serge Gambarelli
  • Henri Jaffrès
  • Jean-Marie George
  • Matthieu Jamet
Regular Article
Part of the following topical collections:
  1. Topical issue: New Trends in Magnetism and Magnetic Materials

Abstract

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.

Keywords

Gate Voltage Interface State Spin Injection Clear Transition Magnetic Tunnel Junction 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Abhinav Jain
    • 1
  • Juan-Carlos Rojas-Sanchez
    • 1
  • Murat Cubukcu
    • 1
  • Julian Peiro
    • 2
  • Jean-Christophe Le Breton
    • 2
  • Céline Vergnaud
    • 1
  • Emmanuel Augendre
    • 3
  • Laurent Vila
    • 1
  • Jean-Philippe  Attané
    • 1
  • Serge Gambarelli
    • 4
  • Henri Jaffrès
    • 2
  • Jean-Marie George
    • 2
  • Matthieu Jamet
    • 1
  1. 1.INAC/SP2M, CEA and Université Joseph FourierGrenobleFrance
  2. 2.Unité Mixte de Physique, CNRS and ThalèsPalaiseauFrance
  3. 3.LETI, CEA Minatec CampusGrenobleFrance
  4. 4.INAC/SCIB, CEA and Université Joseph FourierGrenobleFrance

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