Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.
KeywordsGate Voltage Interface State Spin Injection Clear Transition Magnetic Tunnel Junction
- 14.A. Jain, J.-C. Rojas-Sanchez, M. Cubukcu, J. Peiro, J.C. Le Breton, E. Prestat, C. Vergnaud, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Barski, P. Bayle-Guillemaud, L. Vila, J.-P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J.-M. George, M. Jamet, Phys. Rev. Lett. 109, 106603 (2012) ADSCrossRefGoogle Scholar