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Enhance ferromagnetism by stabilizing the cation vacancies in GaN

  • Zhen-kun Tang
  • Deng-Yu Zhang
  • Li-Ming TangEmail author
  • Ling-Ling WangEmail author
  • Ke-Qiu ChenEmail author
Regular Article

Abstract

The magnetic properties related to cation vacancies in GaN are investigated by first-principles calculations. The results show that a neutral Ga-vacancy induces 3μ B magnetic moment in GaN, but is difficult to form due to the high formation energy. It is found that the Ga-vacancy formation energy can be reduced by adding electrons with uniform compensating positive background charge, by nano-structure engineering, or by co-doping donor-like defects. The Ga-vacancy induced colossal magnetic moment in Gd-doped GaN can be modulated by co-doping the donor like defects. It is suggested that ferromagnetism enhanced by stabilizing the cation vacancies may be applied to other wide band-gap semiconductors as well.

Keywords

Solid State and Materials 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Departments of Physics and Electronics, Hengyang Normal UniversityHengyangP.R. China
  2. 2.Department of Applied PhysicsHunan UniversityChangshaP.R. China

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