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The European Physical Journal B

, Volume 68, Issue 2, pp 233–236 | Cite as

Electron and hole effective masses in self-assembled quantum dots

  • A. P. Zhou
  • W. D. ShengEmail author
Mesoscopic and Nanoscale Systems

Abstract

Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are determined by fitting the energy levels calculated by a single-band model to those obtained by a more sophisticated tight-binding method. For the dots of various shapes and dimensions, the electron effective-mass is found to be much larger than that in the bulk and become anisotropic in the dots of large aspect ratio while the hole effective-mass becomes almost isotropic in the dots of small aspect ratio. For flat InAs/GaAs quantum dots, the most appropriate value for the electron and hole effective-mass is believed to be the electron effective-mass in bulk GaAs and the vertical heavy-hole effective-mass in bulk InAs, respectively.

PACS

71.18.+y Fermi surface: calculations and measurements; effective mass, g factor 73.22.Dj Single particle states 73.21.La Quantum dots 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  1. 1.Surface Physics Laboratory and Department of Physics, Fudan UniversityShanghaiP.R. China

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