Temperature dependence of photoluminescence in amorphous Si1-xCx:H films
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We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si1-xCx:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.
PACS.72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping 78.55.Qr Amorphous materials; glasses and other disordered solids 81.05.Gc Amorphous semiconductors
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