Effect of nitrogen concentration on the electronic and vibrational properties of zinc-blende InNxP1-x(x < 0.01)

  • M. DebbichiEmail author
  • A. Ben Fredj
  • A. Bhouri
  • N. Bouarissa
  • M. Said
Solid and Condensed State Physics


Taking into account the recent advances in the epitaxial growth of single-crystal InN leading to a drastic re-evaluation of its fundamental energy band gap, we have studied the electronic properties of InNxP1-x (x < 0.01) ternary alloy. Using the empirical pseudopotential method under the virtual crystal approximation, combined with the Harrison bond orbital model, the band gap at Γ, X and L points, the effective masses of the Γ valley and the electronic charge densities are calculated as a function of nitrogen composition. The fitted expressions of the energy band gaps indicate that the bowing parameter at Γ reached a broad value for very low nitrogen incorporation (\(x\le 1\%\)). Furthermore, the band gap at Γ point decreases drastically with increasing nitrogen composition up to 1%. The elastic constants and the optical phonon frequencies are also reported. Our theoretical results provide a good agreement with the available data.


71.20.Nr Semiconductor compounds 71.15.-m Methods of electronic structure calculations 71.15.Dx Computational methodology 


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Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Authors and Affiliations

  • M. Debbichi
    • 1
    Email author
  • A. Ben Fredj
    • 1
  • A. Bhouri
    • 1
  • N. Bouarissa
    • 2
  • M. Said
    • 1
  1. 1.Unité de Physique des Solides, Faculté des Sciences de MonastirMonastirTunisia
  2. 2.Department of PhysicsFaculty of Science, King Khalid UniversityAbhaSaudi Arabia

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