Optimization of impurity profile for p-n-junction in heterostructures

Solid and Condensed State Physics

Abstract.

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.

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Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Authors and Affiliations

  1. 1.Institute for Physics of Microstructures of RASNizhny NovgorodRussia
  2. 2.and Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics (http://gip.dft.unipa.it) , Università di PalermoINFM-CNRPalermoItaly

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