Optimization of impurity profile for p-n-junction in heterostructures

Solid and Condensed State Physics

Abstract.

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.

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References

  1. A.B. Grebene Bipolar and MOS analogous integrated circuit design (New York, John Wiley and Sons, 1983) Google Scholar
  2. T. Oka, K. Ouchi, K. Mochizuki, T. Nakamura, Solid State Electronics 41, 1611 (1997) CrossRefGoogle Scholar
  3. I. Zutic, Y. Fabian, S. Das Sarma, Phys. Rev. B 64, 121201 (2001) CrossRefGoogle Scholar
  4. S.T. Sisianu, T.S. Sisianu, S.K. Railean, Semiconductors 36, 581 (2002) CrossRefGoogle Scholar
  5. W.M. Chen, I.A. Buyanova, A.V. Buyanov et al., Phys. Rev. Lett. 77, 2734 (1996) CrossRefPubMedGoogle Scholar
  6. P. Laitinen, A. Strohm, A. Neiminen et al., Phys. Rev. Lett. 89, 085902 (2002) CrossRefPubMedGoogle Scholar
  7. P. Laitinen, Riihim\(\ddot{{\rm a}}\)ki, R\(\ddot{{\rm a}}\)is\(\ddot{{\rm a}}\)nen et al., Phys. Rev. B 68, 155209 (2003) CrossRefGoogle Scholar
  8. T. Oka, K. Hirata, H. Suzuki et al., Int. J. of High Speed Electronics and System, 11, 115 (2001) Google Scholar
  9. R.N. Ghoshtagore, Phys. Rev. B 3, 397 (1971); R.N. Ghoshtagore, Phys. Rev. B 3, 2507 (1971) CrossRefGoogle Scholar
  10. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61, 289 (1989) CrossRefGoogle Scholar
  11. B.A. Zon, S.B. Ledovskiy, A.N. Likholet, Technical Physics 45, 419 (2000) CrossRefGoogle Scholar
  12. Y.Y. Shan, P. Asoka-Kumar, K.G. Lynn, Phys. Rev. B 54, 1982 (1996) Google Scholar
  13. A.A. Dubkov, A.A. Mal’tsev, E.L. Pankratov, Technical Physics 47, 1359 (2002) CrossRefGoogle Scholar
  14. A.N. Malakhov, E.L. Pankratov, Radiophysics and Quantum Electronics 44, 339 (2001) Google Scholar

Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Authors and Affiliations

  1. 1.Institute for Physics of Microstructures of RASNizhny NovgorodRussia
  2. 2.and Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics (http://gip.dft.unipa.it) , Università di PalermoINFM-CNRPalermoItaly

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