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Weak localization effects in some metallic perovskites

  • G. HerranzEmail author
  • F. Sánchez
  • B. Martínez
  • J. Fontcuberta
  • M. V. García-Cuenca
  • C. Ferrater
  • M. Varela
  • P. Levy
Article

Abstract.

We report a systematic study of the low-temperature electrical resistivity of epitaxial nanometric SrRuO3 and LaNiO3 thin films. Weak localization effects were taken into account in order to explain the presence of minima in the \(\rho \)-T curves. This description can be rationalized by the fact that, at the given growth conditions, the mean free path was comparable to the Fermi wavelength of the carriers, so that effects arising from quantum interference of the electronic wavefunctions were expected. The results reported here are of special interest to understand the relevance of weak localization effects in oxides.

Keywords

Oxide Thin Film Growth Condition Perovskite Electrical Resistivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin/Heidelberg 2004

Authors and Affiliations

  • G. Herranz
    • 1
    Email author
  • F. Sánchez
    • 1
  • B. Martínez
    • 1
  • J. Fontcuberta
    • 1
  • M. V. García-Cuenca
    • 2
  • C. Ferrater
    • 2
  • M. Varela
    • 2
  • P. Levy
    • 3
  1. 1.Institut de Ciéncia de Materials de BarcelonaBellaterra, CatalunyaSpain
  2. 2.Departament de Física Aplicada i ÓpticaUniversitat de BarcelonaBarcelona, Catalunya
  3. 3.Departamento de FísicaCAC, CNEASan Martín, Buenos AiresArgentina

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