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Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

  • G. Maggioni
  • S. Carturan
  • W. Raniero
  • S. Riccetto
  • F. Sgarbossa
  • V. Boldrini
  • R. Milazzo
  • D. R. Napoli
  • D. Scarpa
  • A. Andrighetto
  • E. Napolitani
  • D. De Salvador
Special Article - New Tools and Techniques

Abstract.

A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin (\( \le 100\) nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.

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Copyright information

© SIF, Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • G. Maggioni
    • 1
    • 2
  • S. Carturan
    • 1
    • 2
  • W. Raniero
    • 2
  • S. Riccetto
    • 3
  • F. Sgarbossa
    • 1
    • 2
  • V. Boldrini
    • 1
    • 2
  • R. Milazzo
    • 1
  • D. R. Napoli
    • 2
  • D. Scarpa
    • 2
  • A. Andrighetto
    • 2
  • E. Napolitani
    • 1
    • 2
  • D. De Salvador
    • 1
    • 2
  1. 1.Dipartimento di Fisica e Astronomia “G. Galilei”Università di PadovaPadova (PD)Italy
  2. 2.Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di LegnaroLegnaro (PD)Italy
  3. 3.INFN, Sezione di Perugia and Dipartimento di Fisica e Geologia, Università di PerugiaPerugiaItaly

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