Abstract
A comparative study of the growth process of transparent conductive films based on Ga-doped ZnO is carried out during the magnetron sputtering of a traditional ZnO:Ga ceramic target and ZnO:Ga–Zn composite targets with a Zn metal phase content of 10 to 30 wt %. The influence of the composition of composite targets and substrate temperature on the functional characteristics and microstructure of transparent conductive films is studied. It is demonstrated that an increase in the zinc content in the composition of the composite target when the substrate is heated to 200°C and above helps to improve the structural perfection of ZnO:Ga films and reduce their resistivity due to an increase in the concentration of charge carriers against the background of a high value of Hall mobility. All ZnO:Ga films obtained by sputtering composite targets at a substrate temperature of 200°C and above demonstrate high optical transmittance in the visible region.
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The work was carried out within the framework of state assignments of the Dagestan Federal Research Center, Russian Academy of Sciences, and the Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences. The work was carried out using equipment of the Shared Use Center of the Federal Scientific Research Center “Crystallography and Photonics” and the Analytical Center for Collective Use of the Dagestan Federal Research Center.
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Akhmedov, A.K., Asvarov, A.S., Muslimov, A.E. et al. Obtaining ZnO-based Transparent Conductive Films with Improved Functional Properties. Nanotechnol Russia 18, 865–871 (2023). https://doi.org/10.1134/S2635167623600268
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DOI: https://doi.org/10.1134/S2635167623600268