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Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates

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Abstract

The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {InxGa1 – xAs/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.

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Funding

This work was supported by the Russian Science Foundation, grant no. 22-19-00656, https://rscf.ru/project/22-19-00656/.

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Authors and Affiliations

  1. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    E. A. Klimov & S. S. Pushkarev

  2. National Research Nuclear University MEPhI, 115409, Moscow, Russia

    A. N. Klochkov

Authors
  1. E. A. Klimov
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  2. S. S. Pushkarev
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  3. A. N. Klochkov
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Corresponding authors

Correspondence to E. A. Klimov, S. S. Pushkarev or A. N. Klochkov.

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We declare that we have no conflicts of interest.

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Translated by V. Selikhanovich

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Klimov, E.A., Pushkarev, S.S. & Klochkov, A.N. Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates. Nanotechnol Russia 17 (Suppl 1), S41–S44 (2022). https://doi.org/10.1134/S2635167622070126

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  • DOI: https://doi.org/10.1134/S2635167622070126

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