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Silicon-Carbide Epitaxial Structures for Betavoltaic Converters

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Abstract

A physical and technological analysis of silicon-carbide epitaxial structures as the basic components of betavoltaic converters (BVC) is carried out. The main factors limiting the efficiency of SiC-BVCs are determined. It is shown that in order to provide the required level of electric power for an actually long-term inexhaustible energy source, it is necessary to use series-parallel hybrid circuits of large-area betavoltaic multichip converters.

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Funding

This work was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 03.G25.31.0243.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University ETU (LETI), 197376, St. Petersburg, Russia

    V. A. Ilyin, A. V. Afanasyev, V. V. Luchinin, D. A. Chigirev & A. V. Serkov

Authors
  1. V. A. Ilyin
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  2. A. V. Afanasyev
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  3. V. V. Luchinin
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  4. D. A. Chigirev
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  5. A. V. Serkov
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Corresponding authors

Correspondence to V. A. Ilyin, A. V. Afanasyev or V. V. Luchinin.

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We declare that we have no conflicts of interest.

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Translated by V. Selikhanovich

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Ilyin, V.A., Afanasyev, A.V., Luchinin, V.V. et al. Silicon-Carbide Epitaxial Structures for Betavoltaic Converters. Nanotechnol Russia 17 (Suppl 1), S56–S60 (2022). https://doi.org/10.1134/S2635167622070096

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  • DOI: https://doi.org/10.1134/S2635167622070096

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