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Features of the Formation of Conductive Channels in Memristors Based on Solid Electrolytes

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Abstract

Experimental data on measurement of the resistance and electrical conductivity in the low-resistance mode of operation of a germanium-selenide-based memristor with a self-forming conductive channel in the form of a silver filament are obtained in the range of operating frequencies and temperatures. In the frequency experiment, the influence of the switching frequency is tested at room temperature in the range of 1–10 000 Hz. The main result of the experiment is the identification of a linear relationship between the electrical conductivity and the memristor operating cycle time in semilogarithmic coordinates, which made it possible to introduce a temperature-dependent kinetic constant. This experimental fact made it possible to establish the main parameter affecting the shape of the current–voltage characteristics, namely the thickness of the conductive channel.

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Funding

The work was financially supported by the Russian Foundation for Basic Research, project no. 19-29-03003 MK.

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Authors and Affiliations

  1. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    A. N. Aleshin, N. V. Zenchenko & O. A. Ruban

  2. MIREA Russian Technological University, 119454, Moscow, Russia

    N. V. Zenchenko & O. A. Ruban

Authors
  1. A. N. Aleshin
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  2. N. V. Zenchenko
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  3. O. A. Ruban
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Correspondence to O. A. Ruban.

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We declare that we have no conflicts of interest.

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Translated by G. Levit

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Aleshin, A.N., Zenchenko, N.V. & Ruban, O.A. Features of the Formation of Conductive Channels in Memristors Based on Solid Electrolytes. Nanotechnol Russia 17 (Suppl 1), S68–S71 (2022). https://doi.org/10.1134/S2635167622070023

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  • DOI: https://doi.org/10.1134/S2635167622070023

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